Patterning control strategies for minimum edge placement error in logic devices

Mulkens, Jan; Hanna, M. M.; Slachter, Bram; Tel, Wim; Kubis, Michael; Maslow, Mark John; Spence, Chris; Timoshkov, Vadim

doi:10.1117/12.2260155

Cited by 33 publications

(21 citation statements)

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“…The accuracy of alignment for nanoscale features is a prime bottleneck that is currently limiting the advancement to smaller technology nodes in the semiconductor industry. − Misalignment issues arise from the many lithography steps that are employed for the fabrication of device stacks. − Therefore, area-selective atomic layer deposition (ALD) is gaining interest for its potential role in self-aligned fabrication schemes . ALD is a cyclic deposition technique that relies on sequential, self-limiting surface reactions of two or more reactants (i.e., precursors) .…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

et al. 2020

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Despite the rapid increase in the number of newly developed processes, area-selective atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low temperature is typically achieved by employing a plasma as the coreactant, which is not compatible with most approaches to area-selective ALD. In this work, a plasma-assisted ALD process for area-selective deposition of TiN was developed, which involves dosing of inhibitor molecules at the start of every ALD cycle. Aromatic molecules were identified as suitable inhibitor molecules for metal/dielectric selectivity because of their strong and selective adsorption on transition metal surfaces. A four-step (i.e., ABCDtype) ALD cycle was developed, which comprises aniline inhibitor (step A) and tetrakis(dimethylamino)titanium precursor (step B) dosing steps, followed by an Ar−H 2 plasma exposure (step C), during which a substrate bias is applied in the second half of the plasma exposure (step D). This process was demonstrated to allow for ∼6 nm of selective TiN deposition on SiO 2 and Al 2 O 3 areas of a nanoscale pattern with Co and Ru non-growth areas. The TiN deposited using this ABCD-type process is of high quality in terms of resistivity (230 ± 30 μΩ cm) and impurity levels. This developed strategy for area-selective ALD of TiN can likely be extended to area-selective ALD of other nitrides.

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Section: Introductionmentioning

confidence: 99%

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

et al. 2020

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“…[25][26][27] No matter what it is called the combined effect of CD and overlay error is well known to the design community as a key variable that not only affects space between two features but also design constructs that require overlap and intersect area (IA) between two shapes. 28 Edge placement error [29][30][31][32] and relative edge placement error 33 are also terms that describe the effect of CD and overlay error together.…”

Section: Summary and Future Workmentioning

confidence: 99%

Overlay error statistics for multiple-exposure patterning

Gabor

Felix

2019

J. Micro/Nanolith. MEMS MOEMS

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Background: The mathematical equations that explain overlay error of multiple-exposure patterning schemes have not been fully described in the literature and some commonly accepted methods lead to inaccurate estimated and/or measured overlay error. Aims: Develop the proper mathematical framework, using a first principles statistical approach, so that engineers using multiple-exposure patterning can determine the overlay impact and overlay controls needed. Alert patterning community that grouped overlay metrology of multiple-exposures undermeasures the true overlay error. Approach: Use image placement error and population-based statistics to enable a mathematical framework to be established that predicts the actual overlay error for an overlaying pattern that minimizes overlay error back to a pattern that is patterned with multiple-exposure patterning. Results: The overlay error between two patterns is usually less than the root sum square of the two overlay error values of the patterns individually measured to a common prior pattern. Overlay error for a pattern minimizing back to multiple-prior patterns increases quickly as systematic overlay error between the prior patterns increases. Conclusions: Controlling systematic overlay error between patterns of a multipatterned layer is important for subsequent patterns that need to minimize overlay error back to the composite multipatterned layer. The ratio between the overlay error determined with metrology and true overlay can be calculated.

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“…Ultraviolet (UV) photolithography technology is one of the key components in the semiconductor industry. Advancement in the transistor density of integrated circuits (ICs) can be partially attributed to the improvement in the UV photolithography process. , When scaling down the size of a metal oxide semiconductor field effect transistor (MOSFET), mask misalignment became one of the major limitations of UV photolithography. − To solve the issue of mask misalignment, Bencher et al proposed the self-aligned chemical vapor deposition (CVD) [or area-selective CVD (AS-CVD)] spacer double-patterning method which has evolved to a self-aligned quadruple-patterning method in recent years. , The spacer or etch stop material when selectively deposited onto the preferred locations of a pre-etched structure allows the pitch of the IC to be reduced by half. Since then, AS-CVD has garnered attention as an alternative patterning method.…”

Section: Introductionmentioning

confidence: 99%

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH

Huang

Cho

Zhang

et al. 2022

ACS Appl. Mater. Interfaces

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Highly selective and smooth TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates were deposited by water-free pulsed chemical vapor deposition (CVD) at 300 °C using titanium isopropoxide (Ti(O i Pr) 4 ) and hafnium tertbutoxide (Hf(O t Bu) 4 ) with trimethylaluminum (TMA). TMA was found to be the key factor for enhancing nucleation selectivity on SiO 2 or Si versus SiCOH (hydrophobic, nonporous low k dielectric). With precise dosing of TMA, selective nucleation of TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates was achieved and smoother films were formed with higher selectivity compared to single precursor TiO 2 and HfO 2 CVD. The selectivity of TiO 2 /Al 2 O 3 nanolaminate deposition increased from 34 to 44 (deposition on Si vs SiCOH), while RMS roughness of the film of Si decreased from 2.8 to 0.38 nm. The selectivity of HfO 2 /Al 2 O 3 deposition increased from 14 to 73, while the RMS roughness of HfO 2 /Al 2 O 3 on Si was maintained at a similar value of 0.78 nm. Deposition of water-free pulsed CVD TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates was conducted on a Cu/SiCOH patterned sample to study their nanoselectivity. Transmission electron microscopy images of the Cu/ SiCOH patterned sample demonstrated that highly selective and smooth TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates can be formed on a nanoscale pattern.

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Patterning control strategies for minimum edge placement error in logic devices

Cited by 33 publications

References 1 publication

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Overlay error statistics for multiple-exposure patterning

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH

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Patterning control strategies for minimum edge placement error in logic devices

Cited by 33 publications

References 1 publication

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Overlay error statistics for multiple-exposure patterning

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO2/Al2O3 and HfO2/Al2O3 Nanolaminates on Si and SiO2 in Preference to SiCOH

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Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH