Patterning and Templating for Nanoelectronics

Galatsis, K.; Wang, Kang L.; Ozkan, Mihri; Ozkan, Cengiz S.; Huang, Yu; Chang, Jane P.; Monbouquette, Harold G.; Chen, Yong; Nealey, Paul F.; Botros, Youssry Y.

doi:10.1002/adma.200901689

Cited by 109 publications

(91 citation statements)

References 31 publications

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“…[9,10,11,12] The small dimensions (commonly ∼10-50nm) associated with these structures makes them interesting for a variety of applications, and their promise for lithography in particular has attracted a great deal of interest over the past dozen years. [13,14,15,16] In practice, surface interactions with the substrate complicate equilibrium, introducing significant challenges for researchers but also providing an opportunity for additional control over achievable morphologies. [17] Research on block copolymer lithography has progressed to the point where it has been included on the ITRS roadmap as a potentially-feasible solution for patterning at and below the 22nm node.…”

Section: Ns -100msmentioning

confidence: 99%

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Brennecka¹,

Stevens²,

Scrymgeour³

et al. 2010

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Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process.[1] Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale [2], but is currently limited to self-assembly directly on Si or SiO 2 layers. Successful integration of 3 ferroelectrics with discrete and addressable features of ∼15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials-primarily focused on solution-derived ferroelectrics-with discrete features of ∼20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development. 4 AcknowledgmentThe authors would like to extend their gratitude to

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Section: Ns -100msmentioning

confidence: 99%

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Brennecka¹,

Stevens²,

Scrymgeour³

et al. 2010

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“…Currently, feature sizes down to 3 nm can be achieved from the self-assembly of BCPs and, possibly, even smaller feature sizes can be achieved [2]. There is no question that sub-nanometre feature sizes can be obtained by combining the self-assembly of BCPs with naturally occurring biomolecules, such as cyclic peptides [3]. Exciting progress has been made in the past decades using the self-assembly of BCPs on many fronts, including the feature sizes, line-edge roughness, lateral ordering and etch contrast.…”

Section: Introductionmentioning

confidence: 99%

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

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To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

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“…[1][2][3][4][5][6][7] Block copolymer lithography (BCPL) is a promising next generation lithographic technique that could be used for high-throughput and large-area nanolithography; BCPL utilizes the self-assembled nanostructures that form by microphase separation of BCP in thin films. [8][9][10][11][12] The vast majority of research on self-assembling polymers for BCPL has been devoted to polystyrene-block-poly(methyl methacrylate) because the PMMA block can be selectively removed by ultraviolet or oxygen plasma exposure.…”

Section: Introductionmentioning

confidence: 99%

Rapid and reversible morphology control in thin films of poly(ethylene oxide)-block-POSS-containing poly(methacrylate)

Goseki

Hirai

Ishida

et al. 2012

Polym J

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Here we report rapid control of the morphology of a polyhedral oligomeric silsesquioxane (POSS)-containing block copolymer (PEO 143 -b-PMAPOSS 12 ), which is composed of poly(ethylene oxide) (PEO) and POSS-containing poly(methacrylate), (PMAPOSS), between ordered arrays of dots and lines for several tens of seconds by a combination of thermal annealing and solvent annealing. The PEO 143 -b-PMAPOSS 12 was synthesized by atom transfer radical polymerization of POSS methacrylate by using a macroinitiator of PEO. An ordered array of dots was obtained by thermal annealing for the as-spun cast thin film at 90 1C for 60 s. The resultant ordered dots were quickly converted to lines by solvent annealing with chloroform vapor at room temperature for 120 s. The lines were converted back to dots by thermal annealing under the same conditions (90 1C, 60 s) without any changes to the initial diameter, d-spacing or thickness. We also demonstrated the simple and rapid formation of a hexagonally packed array of dots by spin casting onto a trench-patterned silicon wafer under chloroform vapor. Under thermal and solvent annealing conditions, reversibility and a high degree of ordering in the phase morphology of PEO 143 -b-PMAPOSS 12 are distinctive properties that can be attributed to highly mobile polymer chains. Polymer Journal (2012) 44, 658-664; doi:10.1038/pj.2012.67; published online 18 April 2012Keywords: annealing; block copolymer; polyethylene oxide (PEO); polyhedral oligomeric silsesquioxane (POSS); self-assembly; thin film INTRODUCTIONThe self-assembly of thin films from block copolymers (BCPs) has attracted a considerable research interest because of the potential applications to plasmonic waveguides, magnetic logic gates, magnetic data storage and microelectronic devices. 1-7 Block copolymer lithography (BCPL) is a promising next generation lithographic technique that could be used for high-throughput and large-area nanolithography; BCPL utilizes the self-assembled nanostructures that form by microphase separation of BCP in thin films. [8][9][10][11][12] The vast majority of research on self-assembling polymers for BCPL has been devoted to polystyrene-block-poly(methyl methacrylate) because the PMMA block can be selectively removed by ultraviolet or oxygen plasma exposure. 13-15 Despite significant progress, controlling the orientation and long-range ordering of the microphase-separated nanodomains in the thin films remains a formidable technological challenge in terms of feature sizes. It is difficult to form features with a full pitch size o20 nm with most BCPs because of their small FloryHuggins interaction parameter. Silicon-containing BCPs, such as poly(styrene-block-dimethylsiloxane) (PS-b-PDMS), [16][17][18] PS-blockpoly(ferrocenylsilane) [19][20][21] and PMMA-block-polyhedral oligomeric silsesquioxane (POSS)-containing poly(methacrylate), (PMMA-b-

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Patterning and Templating for Nanoelectronics

Cited by 109 publications

References 31 publications

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Pattern transfer using block copolymers

Rapid and reversible morphology control in thin films of poly(ethylene oxide)-block-POSS-containing poly(methacrylate)

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