Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers

Abstract

This work discusses pattern collapse-free drying by application of a sacrificial polymer during the semiconductor wafer cleaning process. The sacrificial polymer is dispensed onto the wafer, displacing the rinse liquid and subsequently dried to form a solid polymer fill within the patterned structure, providing both mechanical support and a means for dry polymer removal by either plasma or thermal exposure. Polymer film thickness, gap fill capability and removal rate are explored for plasma ashable and thermally removable polymer families.

(Invited) Selective Etches for Gate-All-Around (GAA) Device Integration: Opportunities and Challenges

“…An alternative stiction free drying technique, e.g. IPA-based (17,18), sublimation (19)(20)(21) or supercritical CO2 (22,23), will be needed. Otherwise, someone may consider use of FinFET as the long channel devices.…”