This work discusses pattern collapse-free drying by application of a sacrificial polymer during the semiconductor wafer cleaning process. The sacrificial polymer is dispensed onto the wafer, displacing the rinse liquid and subsequently dried to form a solid polymer fill within the patterned structure, providing both mechanical support and a means for dry polymer removal by either plasma or thermal exposure. Polymer film thickness, gap fill capability and removal rate are explored for plasma ashable and thermally removable polymer families.
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