Passivation of InP-based HBTs for high bit rate circuit applications

Caffin, D.; Bricard, L.; Courant, J.L.; Chun, L.S. How Kee; Lescaut, B.; Duchenois, A.M.; Meghelli, Mounir; Benchimol, J.L.; Launay, P.

doi:10.1109/iciprm.1997.600252

Cited by 14 publications

(6 citation statements)

References 7 publications

(3 reference statements)

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“…[27][28][29][30][41][42][43][44][45] However, depending on the layer structure and fabrication process, the reported degree of the degradation can vary from less pronounced to very drastic. The increased leakage currents have often been attributed to the pinning of the surface Fermi level along the passivated surfaces.…”

Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning

confidence: 96%

Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

Driad

Benkhelifa

Kirste

et al. 2011

J. Electrochem. Soc.

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In this paper, the growth and material properties of Al 2 O 3 layers grown by thermal atomic layer deposition (ALD) with water vapor, and plasma ALD with oxygen plasma are examined by spectroscopic ellipsometry and X-ray reflectivity on Si substrates and InGaAs/InP epilayers. The thermal-ALD and plasma-ALD deposited Al 2 O 3 layers have subsequently been used to passivate the surface of InGaAs/InP heterojunction bipolar transistors (HBTs). The impact and efficiency of the ALD-Al 2 O 3 passivation layers have been evaluated using the dc current gain and breakdown voltage of the InGaAs/InP HBTs. For comparison, the results from these experiments are contrasted with results from similar samples passivated with SiO 2 using conventional plasma enhanced chemical vapor deposition (PECVD). The thermal-ALD-Al 2 O 3 passivated InGaAs/InP HBTs show higher current gains as compared to structures passivated using the plasma-ALD or PECVD processes, suggesting differences in the dielectric-semiconductor interface properties. More importantly, as compared to PECVD-SiO 2 , the common emitter characteristics of both (thermal and plasma) ALD-Al 2 O 3 passivated HBTs show fairly stable device breakdown voltage, which is of particular importance, especially in analog applications.

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Section: Film Properties Of Thermal-ald-al 2 O 3 and Plasma-ald-al mentioning

confidence: 96%

Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs∕InP Heterojunction Bipolar Transistors

Driad

Benkhelifa

Kirste

et al. 2011

J. Electrochem. Soc.

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“…We should notice that the tunneling factor at metallurgical junction (N E = 7xlO l6 cm-3 and N B = 2xlO l8 cm- 3 ) is Yn(volume) = 3.8. Also, when electrons tunnelig through conduction band spike is taken in account, the ideality factor remains the same as for ideal thermionic emission [9]~only V n is replaced with where IE is the emitter length (Fig.…”

Section: Ill Experimentsmentioning

confidence: 99%

“…INTRODUCTION The ideality factor, n of InP-based HBTs current-voltage characteristics is dependent on emitter orientation [1,2] and on type of passivation film used [3][4][5]. An accurate correlation between semiconductor surface changes induced by dielectric layer and the ideality factor of base current is hard to make.…”

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confidence: 99%

Tunneling at emitter periphery in silicon nitride passivated InP/InGaAs HBTs

Sachelarie

Predușcă

Stanciu³

2008

2008 20th International Conference on Indium Phosphide and Related Materials

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The E and B subscripts are related to the emitter and base region, respectively.In equation (2), n is the ideality factorThe parameter values used in collector current simulation are presented in Table I. The material constants are from [11], except £B/£o which is from [12]. and V o is the junction built-in potentialAbstract-This work presents a new explanation of the abnormal injection phenomena at emitterbase junction of the silicon nitride passivated InP-based heterojunction bipolar transistors. We have suggested that the emitter mesa sidewall is accumulated and that thermionic field emission from this zone becomes the principal component of the collector current. The proposed theoretical model is in good agreement with experimental collector current Gummel plots and with atomic force microscopy measurements of mesa emitter edge.(4) (7) (6) (5) Richardson velocity for emitter electrons is given by A;T 2 m:,E V nE = ----, , qNC,E m o where A o * is Richardson constant for free electrons A; = 120 (A 1cm 2 • K 2 ).Base transport factor, aT can be calculated from maximum value of d.c. common-emitter current gain,~max 1~max aT = cosh(w B 1L B ) = I+~max .

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“…The device passivation and protection for InP HBTs rely on the dielectric films such as silicon nitride, silicon oxide or polyimide. For InP-based HBTs, polyimide was found to induce the least degradation as compared to SiN X and SiO 2 [4], and thus has been widely used for passivation and planarization of InP HBTs [5,6]. However, we have recently observed a current transient and current gain instabilities in InP/InGaAs HBTs induced by polyimide passivation layer [7].…”

Section: Introductionmentioning

confidence: 99%