In this report, the fabrication of all-nanocrystalline diamond (NCD) nanoelectrode arrays (NEAs) by e-beam lithography as well as of all-diamond nanoelectrode ensembles (NEEs) using nanosphere lithography is presented. In this way, nanostructuring techniques are combined with the excellent properties of diamond that are desirable for electrochemical sensor devices. Arrays and ensembles of recessed disk electrodes with radii ranging from 150 to 250 nm and a spacing of 10 μm have been fabricated. Electrochemical impedance spectroscopy as well as cyclic voltammetry was conducted to characterize arrays and ensembles with respect to different diffusion regimes. One outstanding advantage of diamond as an electrode material is the stability of specific surface terminations influencing the electron transfer kinetics. On changing the termination from hydrogen- to oxygen-terminated diamond electrode surface, we observe a dependence of the electron transfer rate constant on the charge of the analyte molecule. Ru(NH(3))(6)(+2/+3) shows faster electron transfer on oxygen than on hydrogen-terminated surfaces, while the anion IrCl(6)(-2/-3) exhibits faster electron transfer on hydrogen-terminated surfaces correlating with the surface dipole layer. This effect cannot be observed on macroscopic planar diamond electrodes and emphasizes the sensitivity of the all-diamond NEAs and NEEs. Thus, the NEAs and NEEs in combination with the efficiency and suitability of the selective electrochemical surface termination offer a new versatile system for electrochemical sensing.
The surface properties of InGaAs(100) after ex situ treatment with (NH4)2S solution were investigated by photoluminescence (PL) and high-energy resolution x-ray photoelectron spectroscopy. The As 3d, Ga 2p3/2, and In 3d5/2 core level studies show that the surface is free of native oxides and is terminated by S after treatment. A dramatic increase (∼40 times) in the PL efficiency was observed on undoped InGaAs(100) surfaces after sulfur passivation. This S treatment has also been applied to the passivation of the extrinsic base of InGaAs/InP heterojunction bipolar transistors (HBTs). The effectiveness of the sulfur passivation treatment was confirmed by the resulting devices which exhibited dc current gain values of up to 200 at very low collector currents (nA). Further, the sulfur passivated HBTs do not show any dependence on the perimeter-to-area (P/A) ratio of the emitter junction which is of interest for high frequency characteristics while maintaining high current gain.
The development of AlGaN pin photodetectors sensitive in the UV range with different narrow band active regions is reported in this paper. Structures were grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates using three-dimensional GaN as well as high temperature AlN nucleation. Very high specific detectivities of 1×1014 cm Hz0.5 W-1 can be achieved based on optimized growth conditions of undoped and doped AlGaN layers with an Al-content ranging from 0% up to 100%. The crack-free AlGaN layers have edge dislocation densities in the range of 5×109 cm-2. Based on the two different nucleation types, pin layer structures were grown and fabricated to UV-A (320 to 365 nm) and UV-C (< 280 nm) photodetectors. The electro-optical performance of these photodetectors measured on-wafer will be presented in this paper, supplemented by the data of a single photodetector chip mounted in a TO 18 package.
Non-polar a-plane Al0.77Sc0.23N 112¯0 thin films were prepared by magnetron sputter epitaxy on r-plane Al2O3(11¯02) substrates. Different substrate off-cut angles were compared, and the off-cut angle of 3° resulted in the best structural quality of the AlScN layer. Structural characterization by x-ray diffraction confirmed that single phase, wurtzite-type, a-plane AlScN 112¯0, surface acoustic wave resonators were fabricated with wavelengths λ = 2–10 μm (central frequency up to 1.7 GHz) with two orthogonal in-plane propagation directions. A strong dependence of electromechanical coupling on the in-plane orientation was observed. Compared to conventional c-plane AlScN based resonators, an increase of 185–1000% in the effective electromechanical coupling was achieved with only a fractional decrease of <10.5% in series resonance frequency.
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