Particle detectors based on semi-insulating silicon carbide

Rogalla, M.; Runge, K.; Söldner-Rembold, A

doi:10.1016/s0920-5632(99)00596-4

Cited by 85 publications

(48 citation statements)

References 8 publications

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“…Among the investigated materials, the silicon carbide (SiC) semiconductor has raised large interest and has been already used in a wide range of applications [1,2,3,4,5,6,7,8]. In particular, recent work has been done on the development of SiC radiation detectors [9,10] and on the characterization of their performances. SiC detectors were used with excellent results as neutron [11] and X-ray detectors operating at high temperatures [12].…”

Section: Introductionmentioning

confidence: 99%

Light ions response of silicon carbide detectors

Napoli

Raciti

Rapisarda

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Introductionmentioning

confidence: 99%

Light ions response of silicon carbide detectors

Napoli

Raciti

Rapisarda

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

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“…An e value of 8.4 eV for alpha particles was reported by Rogalla et al in semi-insulating 4H-SiC. 15 Lebedev et al 16 have reported e ¼ 8.6 eV for alpha particles in epitaxial n-type 4H-SiC. Slightly lesser values have been reported in epitaxial n-type 4H-SiC by Ivanov et al 17 , e ¼ 7.71 eV for alpha particles, and by Bertuccio and Casiraghi, 18 e ¼ 7.8 eV for 59.5 keV gamma rays.…”

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confidence: 71%

“…Electronic mail: mandalk@cec.sc.edu. off-cut towards the [11][12][13][14][15][16][17][18][19][20] direction. The crystal dimensions were 8 Â 8 mm 2 which were diced from a 76.2 mm diameter parent wafer.…”

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confidence: 99%

Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach

Chaudhuri

Zavalla

Mandal

2013

Applied Physics Letters

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Electron-hole pair creation energy (ε) has been determined from alpha spectroscopy using 4H-SiC epitaxial layer Schottky detectors and a pulser calibration technique. We report an experimentally obtained ε value of 7.28 eV in 4H-SiC. The obtained ε value and theoretical models were used to calculate a Fano factor of 0.128 for 5.48 MeV alpha particles. The contributions of different factors to the ultimate alpha peak broadening in pulse-height spectra were determined using the calculated ε value and Monte-Carlo simulations. The determined ε value was verified using a drift-diffusion model of variation of charge collection efficiency with applied bias.

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“…In addition, the devices are chemically and mechanically stable [2]- [4]. They are widely used for nuclear radiation detection [5]- [11] . Other potential areas requiring High Temperature Electronics (HTE) include nuclear well logging, aerospace and space craft as well as automobile industries.…”

Section: Introductionmentioning

confidence: 99%

Stability of Silicon Carbide Particle Detector Performance at Elevated Temperatures

Abubakar

Lohstroh

Sellin

2015

IEEE Trans. Nucl. Sci.

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Abstract-The alpha spectroscopy performance and electric current stability of 4H-silicon carbide Schottky devices with 50 µm epitaxial layer was examined at temperatures between 300 to 500 K at 50 K intervals. An activation energy of 5.98 ± 0.64 meV was extracted from temperature dependent resistivity measurements. The Schottky barrier height decreases from 1.33 eV at 300 K to 1.11 eV at 500 K and the ideality factor increases from 1.17 at 300 k to 1.79 at 500 K. The reverse bias leakage currents stabilises faster at higher temperatures. The charge collection efficiency is above 90% for temperatures up to 500 K. Pulse height spectra collected for 24 hours at constant voltage and temperature show improvements with time within the first 8 hours and remained stable for the remainder of the acquisition time. The peak width of the alpha spectra reduces significantly with increasing temperature at applied bias voltages below 50 V, which indicates that leakage currents are not the limiting factor in those conditions even at 500 K in our set up. So far, the devices indicate reasonable stability for extended periods of operation and highlight possible applications in harsh radiation media.

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Particle detectors based on semi-insulating silicon carbide

Cited by 85 publications

References 8 publications

Light ions response of silicon carbide detectors

Light ions response of silicon carbide detectors

Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach

Stability of Silicon Carbide Particle Detector Performance at Elevated Temperatures

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