Partially Fluorinated Graphene: Structural and Electrical Characterization

Cheng, Lanxia; Jandhyala, Srikar; Mordi, Greg; Lucero, Antonio T.; Huang, Jie; Azcatl, Angelica; Addou, Rafik; Wallace, Robert M.; Colombo, Luigi; Kim, Jiyoung

doi:10.1021/acsami.5b11701

Cited by 90 publications

(77 citation statements)

References 33 publications

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“…As example, the deconvolution of the spectrum for a 12.3 at% flake is shown in Figure 3a. [32] The additional peak between the D and G modes at 1456.5 cm −1 is generally attributed to the presence of F-containing covalent groups at the basal plane of the flakes, [16] and its large width is an artefact associated with the close proximity to the more intensive D and G modes. [32] The additional peak between the D and G modes at 1456.5 cm −1 is generally attributed to the presence of F-containing covalent groups at the basal plane of the flakes, [16] and its large width is an artefact associated with the close proximity to the more intensive D and G modes.…”

Section: Fluorographenementioning

confidence: 99%

“…Specifically, the presence of edges in graphene can be decisive. To date, multiple methods for graphene fluorination have been extensively studied [8,10,[13][14][15][16][17][18][19][20][21] and it has been shown that the F content can be varied controllably by adjusting the reaction conditions. In thin film-based systems, however, the charge transport also is largely affected by the properties of edge/edge, edge/plane, and plane/plane junctions.…”

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confidence: 99%

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Electrical Transport in Devices Based on Edge‐Fluorinated Graphene

Koleśnik-Gray

Sysoev

Gollwitzer

et al. 2018

Adv Elect Materials

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When considering fluorinated graphene (FG)-based functional device technology, the device architectures must be chosen adequately. Typically, functionalized graphene devices can be envisaged as either large scale (area)-based thin film structures or as systems integrated from individual nanoobjects. This implies potentially significant qualitative and quantitative differences in the device response. Specifically, the presence of edges in graphene can be decisive. Considering the electrical conductivity of individual mono-and fewlayer flakes, it is dominated by the type, amount, and bonding position (basal or edge) of functional groups attached to the C(sp 2 ) matrix. In thin film-based systems, however, the charge transport also is largely affected by the properties of edge/edge, edge/plane, and plane/plane junctions. [22] Therefore, electrical characterization is a primary means to evaluate and benchmark whether or not a given derivative meets the requirements for selected applications.In the present work we study the impact of F content and bonding position on the electronic properties of graphene fluorinated by BrF 3 vapor at room temperature [8,20] in the range of 2.4-16.6 at%. We compared the electrical conductivity of thin films with the conductivity of corresponding individual FG flakes which constitute the former. We found a significant difference in the conductivity dependence on the degree of fluorination for the two device architectures: While in the case of thin films, a strong decrease in conductivity with fluorine content was observed, individual flakes showed an increase in conductivity and exhibited graphene-like bipolar transfer characteristics with electron and hole mobilities of the order of few 1000s cm 2 V −1 s −1 for F content approaching 17 at%. With further aid of scanning electron and Raman microscopy, this qualitative difference between films and single flakes was attributed to the circumstance that the preferred sites for fluorination are at the edges rather than basal planes of the FG.For the characterization of thin film devices, 3 mm long and 1 mm wide structures were defined using a hard-mask technique (Figure 1a). FG dispersions were sprayed onto Si wafers with 300 nm thermal SiO 2 on top, resulting in homogeneous and continuous films (Figure 1b), which were then electrically contacted with conducting silver paste. For electrical characterization of individual flakes, small amounts of the dispersionsThe conductivity of few-and monolayer graphene with covalently bound moieties is a key-point in the potential application of these materials in any electrical and optoelectronic device. In particular, fluorination of such graphene-based systems is of interest, as fluorine is expected to have a strong influence on the charge-carrier density due to its high electronegativity, and therefore modify the electrical transport properties significantly. Here it is shown that, depending on the device architecture, the electrical properties of fluorinated graphene-based devices are significantly d...

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Section: Fluorographenementioning

confidence: 99%

mentioning

confidence: 99%

Electrical Transport in Devices Based on Edge‐Fluorinated Graphene

Koleśnik-Gray

Sysoev

Gollwitzer

et al. 2018

Adv Elect Materials

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“…The advantage of XeF 2 is the relative ease of manipulation compared to for example, F 2 . Other methods include, for example, treatment in CF 4 plasma at low pressures . Progressive fluorination of graphene in CF 4 plasma is shown in Figure .…”

Section: Synthesis Of Graphene Derivativesmentioning

confidence: 99%

Chemistry of Graphene Derivatives: Synthesis, Applications, and Perspectives

Šturala

Luxa

Pumera

et al. 2018

Chemistry A European J

114

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The chemistry of graphene and its derivatives is one of the hottest topics of current material science research. The derivatisation of graphene is based on various approaches, and to date functionalization with halogens, hydrogen, various functional groups containing oxygen, sulfur, nitrogen, phosphorus, boron, and several other elements have been reported. Most of these functionalizations are based on sp hybridization of carbon atoms in the graphene skeleton, which means the formation of out-of-plane covalent bonds. Several elements were also reported for substitutional modification of graphene, where the carbon atoms are substituted with atoms like nitrogen, boron, and several others. From tens of functional groups, for only two of them were reported full functionalization of graphene skeleton and formation of its stoichiometric counterparts, fluorographene and hydrogenated graphene. The functionalization of graphene is crucial for most of its applications including energy storage and conversion devices, electronic and optic applications, composites, and many others.

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“…Additionally, the defects and undesired system downtime associated with NH 4 Cl will reduce productivity. More importantly, some applications prefer a halide-free process [4,135,136,137]. …”

Section: Challenges Of Sinx Aldmentioning

confidence: 99%

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

et al. 2016

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With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique.

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Partially Fluorinated Graphene: Structural and Electrical Characterization

Cited by 90 publications

References 33 publications

Electrical Transport in Devices Based on Edge‐Fluorinated Graphene

Electrical Transport in Devices Based on Edge‐Fluorinated Graphene

Chemistry of Graphene Derivatives: Synthesis, Applications, and Perspectives

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

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