Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE

Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy

“…Figure 3 shows electron mobility at 77 K of the ͑411͒A In 0.74 Ga 0.26 As/ In 0.46 Al 0.54 As MD-QW plotted as a function of sheet electron concentration of 2DEG. Electron mobilities ͑77 K͒ of the (100) reference sample ͑y = 0.54͒ and other (100) InGaAs/ InAlAs MD-QWs reported so far [10][11][12][13][14][15][16][17][18][19][20][21] are also plotted in Fig. 3.…”

Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

“…Experimental [5] and theoretical [3,6] evidence suggest that the performance of such devices may be improved by full or partial relaxation of the channel strain. The relative values of the lattice constants of 111-V materials indicate that channel relaxation may be achieved by using thick InAlAs as a strain-relief buffer or a virtual substrate.…”

“…Handling the fragile InP substrate presents additional technological problems. An alternative approach is to use 'virtual substrates' where relaxed InAlAs buffers are grown on conventional GaAs wafers to match various channel lattice constants [5].…”