Parametric modeling of the dielectric functions of Cd1−xMgxTe alloy films

Ihn, Y. S.; Kim, T.J.; Ghong, T. H.; Kim, Y.D.; Aspnes, D. E.; Kossut, J.

doi:10.1016/j.tsf.2004.01.015

Cited by 28 publications

(6 citation statements)

References 13 publications

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“…In Fig. 1b , we show the n and k values obtained by fitting the ellipsometry data using 5 general oscillator functions: 1 Cody-Lorentz 35 , 3 Gaussian and 1 Psemi-MO 36 , 37 . We give full details of the optical fitting in the Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

Consolidation of the optoelectronic properties of CH3NH3PbBr3 perovskite single crystals

et al. 2017

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Ultralow trap densities, exceptional optical and electronic properties have been reported for lead halide perovskites single crystals; however, ambiguities in basic properties, such as the band gap, and the electronic defect densities in the bulk and at the surface prevail. Here, we synthesize single crystals of methylammonium lead bromide (CH3NH3PbBr3), characterise the optical absorption and photoluminescence and show that the optical properties of single crystals are almost identical to those of polycrystalline thin films. We observe significantly longer lifetimes and show that carrier diffusion plays a substantial role in the photoluminescence decay. Contrary to many reports, we determine that the trap density in CH3NH3PbBr3 perovskite single crystals is 1015 cm−3 , only one order of magnitude lower than in the thin films. Our enhanced understanding of optical properties and recombination processes elucidates ambiguities in earlier reports, and highlights the discrepancies in the estimation of trap densities from electronic and optical methods.

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Section: Resultsmentioning

confidence: 99%

Consolidation of the optoelectronic properties of CH3NH3PbBr3 perovskite single crystals

et al. 2017

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“…As the IZTO films exhibit direct optical transition [ 20 ], the parameterized semiconductor oscillator function (PSEMI) model, which analytically describes the dielectric functions as the summation of several energy-bounded Gaussian-broadened polynomials and poles, accounting for index effects due to absorption occurring outside the region being modeled, was used ( ε (PSEMI) ) [ 21 , 22 , 23 ].…”

Section: Resultsmentioning

confidence: 99%

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

et al. 2021

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A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss–Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology.

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“…[16][17][18] In brief, in the PM the dielectric function is given as the summation of m energy-bounded Gaussian-broadened polynomials to represent CP contributions within the accessible spectral range and P poles to represent outside contributions. 11,12 The general expression is…”

Section: A Parametric Modelmentioning

confidence: 99%

“…Its superiority has been proven for several interesting materials. [16][17][18] We report here the parameters needed to calculate e over the energy and temperature ranges given above, following up on our previously reported data over the same spectral and temperature ranges. 19 These results will be useful for a wide range of applications, including in-situ monitoring, growth control, and device design.…”

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confidence: 99%

Parameterization of the dielectric function of InP from 1.19 to 6.57 eV for temperatures from 25 to 700 K

Kim

Hwang

Byun

et al. 2012

Journal of Applied Physics

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Parametric modeling of the dielectric functions of Cd1−xMgxTe alloy films

Cited by 28 publications

References 13 publications

Consolidation of the optoelectronic properties of CH3NH3PbBr3 perovskite single crystals

Consolidation of the optoelectronic properties of CH3NH3PbBr3 perovskite single crystals

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

Parameterization of the dielectric function of InP from 1.19 to 6.57 eV for temperatures from 25 to 700 K

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