Parameter extraction from fabricated silicon photonic devices

Chen, Xi; Li, Zheng; Mohamed, Moustafa; Shang, Li; Mickelson, Alan

doi:10.1364/ao.53.001396

Cited by 14 publications

(6 citation statements)

References 50 publications

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“…We find that the calculations of the effective device index based on the change of the substrate temperature recover the observed wavelength transfer functions. More discussion on the use of the analytical transfer function models to extract more data from the measurements as well as to make predictions of the device's performance is relegated to a work in progress [26].…”

Section: Test Structures and Their Measurementmentioning

confidence: 99%

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Process variation in silicon photonic devices

Chen

Mohamed

et al. 2013

Appl. Opt.

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An array of passive silicon-on-insulator optical devices is laid out in repeating patterns on four foundry-fabricated wafers. The physical and optical characterization of these microrings, racetrack resonators, and directional couplers are found to exhibit significant variation in optical response. A device-heating experiment carried out on a number of different devices demonstrates that thermal effects are independent of the device's location on the wafer. An analysis of the variation of the optical responses of the room-temperature devices is used to determine the process variation. We find that if we form successive arrays of the values of a quantity of interest (the peak wavelength of a transfer function) at a single device at some point on the wafer, and then increase the size of the array by including the values of the devices at ever greater distances from the original, then the variance of the values of the successive arrays increases linearly with the linear extent of the sample. That is, the process variation exhibits "random walk" pattern with spatial extent. We express the process variation in units of variance per length and find that our measured values agree with others in the literature; that is, the process variation is approximately 1 nm2/cm.

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Section: Test Structures and Their Measurementmentioning

confidence: 99%

“…Each selected wavelength has a unique effective index value of n eff λ sel . Further discussion will be given about the modeling in [26]. The on-chip thermal variation affects the effective index n eff of the corresponding devices thereby affecting the wavelength drift.…”

Section: Measurements and Analysis Of Wavelength-dependent Transmimentioning

confidence: 99%

Process variation in silicon photonic devices

Chen

Mohamed

et al. 2013

Appl. Opt.

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“…MZIs are good candidates as they are simple in design, linear in phase response and flexible in choosing the filter order. When using ring resonators, the measurements must be done at sufficiently low power levels to avoid nonlinear effects [7]- [9]. Also, the resulting measurement will be a weighted average of the bends, the straight sections and the coupling sections.…”

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confidence: 99%

Experimental Extraction of Effective Refractive Index and Thermo-Optic Coefficients of Silicon-on-Insulator Waveguides Using Interferometers

Dwivedi

Ruocco

Vanslembrouck

et al. 2015

J. Lightwave Technol.

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Abstract-We propose and demonstrate an accurate method of measuring the effective refractive index and thermo-optic coefficient of silicon-on-insulator waveguides in the entire C-band using three Mach-Zehnder interferometers. The method allows for accurate extraction of the wavelength dispersion and takes into account fabrication variability. Wafer scale measurements are performed and the effective refractive index variations are presented for three different waveguide widths: 450, 600, and 800 nm, for the TE polarization. The presented method is generic and can be applied to other waveguide geometries and material systems and for different wavelengths and polarizations.Index Terms-Effective refractive index, thermo-optic coefficients, waveguides, wavelength filtering devices.

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“…Therefore, optical transmission measurements provide a very attractive alternative to measure fabricated geometry. Mach-Zehnder interferometers (MZIs) and ring resonators can be used to extract the average effective and group indices of the guided waveguide mode along the path of a delay line [7][8][9][10][11][12]. Because silicon waveguides are extremely sensitive to geometry variations, the effective and group indices can be mapped onto geometric parameters such as waveguide linewidth and thickness, which allows us to derive small variations in the fabricated waveguide geometry.…”

Section: Introductionmentioning

confidence: 99%

Compact silicon photonics circuit to extract multiple parameters for process control monitoring

Xing¹,

Wang²,

Ruocco³

et al. 2020

OSA Continuum

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We present a compact interferometer circuit to extract multiple model parameters of on-chip waveguides and directional couplers from optical measurements. The compact design greatly improves the accuracy of extraction with fewer measurements, making it useful for process monitoring and detailed wafer-level variability analysis. We discuss the design requirements and illustrate the extraction using the Restart-CMA-ES global optimization algorithm.

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Parameter extraction from fabricated silicon photonic devices

Cited by 14 publications

References 50 publications

Process variation in silicon photonic devices

Process variation in silicon photonic devices

Experimental Extraction of Effective Refractive Index and Thermo-Optic Coefficients of Silicon-on-Insulator Waveguides Using Interferometers

Compact silicon photonics circuit to extract multiple parameters for process control monitoring

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