Parallel Gated Junctionless Field Effect Transistor

Raibaruah, Apurba Kumar; Sarma, Kaushik Chandra Deva

doi:10.1109/compe49325.2020.9200029

Cited by 5 publications

(2 citation statements)

References 17 publications

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“…It has now become a rising device in the non-volatile memory market. In this work, we are going to carry out the modeling of the depletion layer and threshold voltage of the Parallel Gated Junctionless FET (PGJLFET) [17,18]. PGJLFET works better during the ON state as compared to conventional Junctionless Transistors [17].…”

Section: Introductionmentioning

confidence: 99%

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An Analytical Model for the Depletion Region Width and Threshold Voltage of a Parallel Gated Junctionless Field Effect Transistor

Raibaruah¹,

Sarma²

2022

J. Nano- Electron. Phys.

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This paper reports on the modeling of the depletion region width and threshold voltage of a parallel gated junctionless field effect transistor. The depletion region width is obtained by resolving 1D Poisson equation along the channel of the device in the y-direction. The central potential through the channel region of the device is also considered. With the help of the depletion region width and device central potential model, the threshold voltage of the device is obtained. Exploration has been made for different variations of the depletion width depending on the gate to source voltage, gate oxide thickness, and different gate dielectric materials. For a 0.6 V gate bias, a 4 nm depletion width is achieved. The threshold voltage variation is obtained and analyzed by considering different drain voltages, doping concentrations, temperatures, and work functions. The device at 10 19 cm -3 doping concentration, 300 K temperature, and 5.4 eV work function with a drain voltage of 1 V allows a threshold voltage of 0.47 V.

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Section: Introductionmentioning

confidence: 99%

“…In this work, we are going to carry out the modeling of the depletion layer and threshold voltage of the Parallel Gated Junctionless FET (PGJLFET) [17,18]. PGJLFET works better during the ON state as compared to conventional Junctionless Transistors [17]. The cross-sectional view of the PGJLFET is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%