Palladium seeded GaAs nanowires

Hallberg, Robert; Lehmann, Sebastian; Messing, Maria E.; Dick, Kimberly A.

doi:10.1557/jmr.2015.400

Cited by 10 publications

(18 citation statements)

References 37 publications

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“…The substrate orientation also has a direct effect on the direction of grown NWs as observed from the results of the model. This phenomenon has also been observed earlier by several other research groups . Besides, with average droplet size of 180 nm we have achieved highest yield (77%) of vertical In x Ga 1−x As NWs on (100) surface reported in the literature …”

Section: Resultssupporting

confidence: 89%

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Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Sarkar

Banerji

2019

Physica Status Solidi (b)

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Growth of nanowires and etching of a substrate can be undertaken simultaneously as found during the silver droplet assisted growth of InxGa1−xAs nanowires (NWs) on Ge (100) substrates by metal organic chemical vapor deposition technique. The growth direction of free standing NWs has been found to be controlled by the size of the silver nanoparticles (AgNP). Vapor–liquid–solid growth of vertical free standing NWs on Ge (100) substrates has been found possible when the average AgNP size is 180 nm without any surface treatments or nucleation steps under experimental precursor flow rates and temperature. The NWs are found to grow in 〈011〉 and 〈111〉 direction with 120 nm average catalyst size and below that size, the AgNPs are found to etch the Ge surface instead of growing NWs. Two different kinds of etching have been observed. AgNPs of 20 nm size selectively etch the Ge (100) surface resulting in inverted pyramidal holes whereas larger AgNPs do not show any selective etching characteristics, rather create cylindrical holes. The switchover from growth to etching in smaller droplet size regime has been attributed to Gibbs–Thompson effect. The results prove the efficacy of AgNPs for simultaneous nanopatterning and nanostructure growth on Ge (100) surface.

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Section: Resultssupporting

confidence: 89%

“…Researchers have also investigated the role of foreign nanoparticles other than Au for III–V NW growth. Growth of InP and GaAs NWs using Cu, Fe, Ni, Pd, Mn, and Sn has been investigated. However, very few studies are reported regarding the self‐seeded growth of In x Ga 1−x As NWs .…”

Section: Introductionmentioning

confidence: 99%

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Sarkar

Banerji

2019

Physica Status Solidi (b)

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“…In the quest to achieve VLS in a non-self-catalyzed manner, Hallberg et al and Sun et al have performed pioneering work on alternative metals for the growth of III-arsenide and III-phosphide nanowires. For example, Pd-and Sn-catalyzed GaAs [128,129] and Cu-catalyzed InP [130,131] nanowire growth has recently been demonstrated. This area of research is still in its relatively early stages; high quality nanowires are still challenging to grow with catalyst metals other than Au.…”

Section: Catalyst Selectionmentioning

confidence: 99%

Semiconductor nanowires: to grow or not to grow?

McIntyre

Morral

2020

Materials Today Nano

115

122

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Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

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“…72,[74][75][76] As for [110] oriented ZB nanowires there can be several cross-section configurations from trapezoidal to diamond-like shapes and non-regular hexagons. 72,74,[77][78][79][80] WZ nanowires can be typically fabricated along [0001] with hexagonal cross-section, while WZ nanowires grown along [1120], and [1010] present square crosssection. 70,74,81 On the other hand, from a theoretical perspective nanowires are usually treated with cylindrical or square cross-section which simplifies the calculations without sacrificing the underlying physical features of the system.…”

Section: Nanowire Modelingmentioning

confidence: 99%

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k·p method

et al. 2018

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A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite InAs nanowires are studied along [0001] and [1010] or [1120] directions. Robust multiband k · p Hamiltonians are solved by using plane wave expansions of realspace parameters. In all cases the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies are on the µeV scale, except for InAs wurtzite nanowires grown along [1010] or [1120], in which the spin-orbit energy is about meV, largely independent of the wire diameter. Significant spin-orbit coupling is obtained by applying a transverse electric field, causing the Rashba effect. For an electric field of about 4 mV/nm the obtained spin-orbit energies are about 1 meV for both materials in all investigated growth directions. The most favorable system, in which the spin-orbit effects are maximal, are InAs WZ nanowires grown along [1010] or [1120], since here spin-orbit energies are giant (meV) already in the absence of electric field. The least favorable are InAs WZ nanowires grown along [0001], since here even the electric field does not increase the spin-orbit energies beyond 0.1 meV. The presented results should be useful for investigations of optical orientation, spin transport, weak localization, and superconducting proximity effects in semiconductor nanowires. arXiv:1802.06734v2 [cond-mat.mes-hall] 30 Apr 2018Appendix A: Plane wave expansion and numerical details

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Palladium seeded GaAs nanowires

Abstract: Abstract

Cited by 10 publications

References 37 publications

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Semiconductor nanowires: to grow or not to grow?

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k·p method

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Palladium seeded GaAs nanowires

Abstract: Abstract

Cited by 10 publications

References 37 publications

Diameter‐Dependent Growth Direction of InxGa1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Diameter‐Dependent Growth Direction of InxGa1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Semiconductor nanowires: to grow or not to grow?

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k·p method

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Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size