Semiconductor nanowires: to grow or not to grow?

Abstract

Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

Morphology of Ga2O3 Nanowires and Their Sensitivity to Volatile Organic Compounds

“…With these methods, large quantities of nanowires can be obtained at relatively low cost. It is generally assumed that the growth of metal oxide nanowires follows the Vapor–Liquid–Solid (VLS) or Vapor–Solid (VS) mechanisms, or a combination of both [ 35 ]. However, there are reports in the literature that the growth of β-Ga 2 O 3 may follow a different mechanism.…”

Facile synthesis of Ge1−xSnx nanowires

“…For example, the diameter of the interface of the nanowire shown in figure 1(b) is about 110 nm, whilst the diameter of the interface region of the nanowire in figure 3(a) is about 75 nm (The corresponding magnified images are shown in figure S3.) The interface between the seed particle and nanowire is typically smaller than the diameter at half-length because of the growth mechanism involved in this type of nanowire synthesis [28,[34][35][36][37].…”

Heterotwin Zn3P2superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

“…Filamentary crystals, also known as nanowires, have provided additional design freedom in the elaboration of materials with desirable properties. [1][2][3][4] This arises from the possibility of engineering the crystal phase and material composition, and for the possibility of expanding the structure in three dimensions. 3,5,6 Among the design opportunities, the composition or structure of nanowires can be arranged periodically in the form of superlattices.…”