2019
DOI: 10.1021/acsnano.8b09476
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Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

Abstract: A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging.However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of low photoresponsivity, instability in the air and high dark current. In this study, we report a highly sensitive, air-stable and operable long-wavelength infra… Show more

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Cited by 210 publications
(322 citation statements)
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“…The D n * was calculated to be about 1.44 × 10 11 and 4.45 × 10 10 Jones (cm Hz 1/2 W −1 ), respectively, a bit lower than D * values obtained only considering I dark as the major source of short noise. Even so, the NEP and D n * based on 5 L BiOBr device are also much superior than those of the other reported 2D photodetectors considering noise current such as PdSe 2 (2.8 × 10 −13 W Hz −1/2 , 6 × 10 9 Jones)43 and PtSe 2 (7 × 10 8 Jones) 44. The excellent DUV detection capability of the BiOBr‐based photodetector has huge potential to realize high‐integration, high‐performance, low‐cost, and low‐power optoelectronic integrated circuit.…”
Section: Figurementioning
confidence: 73%
“…The D n * was calculated to be about 1.44 × 10 11 and 4.45 × 10 10 Jones (cm Hz 1/2 W −1 ), respectively, a bit lower than D * values obtained only considering I dark as the major source of short noise. Even so, the NEP and D n * based on 5 L BiOBr device are also much superior than those of the other reported 2D photodetectors considering noise current such as PdSe 2 (2.8 × 10 −13 W Hz −1/2 , 6 × 10 9 Jones)43 and PtSe 2 (7 × 10 8 Jones) 44. The excellent DUV detection capability of the BiOBr‐based photodetector has huge potential to realize high‐integration, high‐performance, low‐cost, and low‐power optoelectronic integrated circuit.…”
Section: Figurementioning
confidence: 73%
“…Lately, bismuth selenide (Bi 2 Se 3 ) has been proved to be narrow bandgap (0.3 eV) topological insulator (TI) with various fascinating physical phenomena and unique physical properties (quantum oscillations, weak inverse positioning) . In addition, Bi 2 Se 3 has very infusive photoelectric properties, such as tunable surface bandgap, polarization‐sensitive photocurrent, and thickness size‐dependent optical absorption.…”
Section: Introductionmentioning
confidence: 99%
“…Die optischen Eigenschaften von PdSe 2 machen es vorteilhaft für Sensoranwendungen und Photokatalyse . Long et al . stellten einen hochempfindlichen, luftstabilen, langwelligen Infrarot‐Photodetektor basierend auf einer MoS 2 /PdSe 2‐ Heteroverbindung her, welcher hohe Photoresponsivitäten von 42.1 A W −1 bei 10.6 μm aufweist.…”
Section: Eigenschaften Und Anwendungenunclassified
“…NMDCs haben viel Aufmerksamkeit als neue Mitglieder der Familie von 2D‐Materialien erhalten, weil diese einen kontrollierbaren Metall‐zu‐Halbleiter‐Übergang mit der Lagenanzahl aufweisen, wobei dünne Schichten und das Bulk‐Material topologische Eigenschaften als Dirac‐Typ‐II‐Halbmetall besitzen . Die NMDCs zeigen eine herausragende Leistung als Sensoren, zum Beispiel für Druck oder bestimmte molekulare Spezies . Ihre Chemie, die sehr anisotrope strukturelle Merkmale, geringe Energiebarrieren zwischen den Strukturtypen, kontrollierbare Phasenübergänge und katalytische Eigenschaften beinhaltet, unterscheidet sich von den Übergangsmetalldichalkogeniden (TMDCs) wie MoS 2 oder WSe 2 .…”
Section: Introductionunclassified