Proceedings 17th IEEE VLSI Test Symposium (Cat. No.PR00146)
DOI: 10.1109/vtest.1999.766701
|View full text |Cite
|
Sign up to set email alerts
|

PADded cache: a new fault-tolerance technique for cache memories

Abstract: This paper presents a new fault-tolerance technique for cache memories. Current fault-tolerance techniques for caches are limited either by the number of faults that can be tolerated or by the rapid degradation of performance as the number of faults increases. In this paper, we present a new technique that overcomes these two problems.This technique uses a special Programmable Address Decoder (PAD) to disable faulty blocks and to re-map their references to healthy blocks. Simulation results show that the perfo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
35
0

Publication Types

Select...
4
3
2

Relationship

0
9

Authors

Journals

citations
Cited by 61 publications
(35 citation statements)
references
References 14 publications
(16 reference statements)
0
35
0
Order By: Relevance
“…Similarly, Wilkerson et al [21] proposed multiple techniques using part of a cache line as redundancy for defective bits for the rest of cache lines in the same set. PADed cache [19] and Agarwal's design [1] program column multiplexer and address decoders to select nonfaulty blocks, respectively.…”
Section: Architecture-level Techniquesmentioning
confidence: 99%
“…Similarly, Wilkerson et al [21] proposed multiple techniques using part of a cache line as redundancy for defective bits for the rest of cache lines in the same set. PADed cache [19] and Agarwal's design [1] program column multiplexer and address decoders to select nonfaulty blocks, respectively.…”
Section: Architecture-level Techniquesmentioning
confidence: 99%
“…In traditional caches, a memory block mapped to a faulty line/set is statically remapped to another good line/set [12][13][14]. Such schemes increase the number of conflict misses since the remapped cache line/set is now shared by more memory addresses.…”
Section: Additional Benefitsmentioning
confidence: 99%
“…In fast Static Random-Access Memory (SRAM) cells, it induces Static Noise Margin (SNM) variability which causes errors [1,2,3] in some cells when working below Vccmin. Different approaches have been devised to deal with this problem [4,5,6].…”
Section: Introductionmentioning
confidence: 99%