Packaging with Double-Side Cooling Capability for SiC Devices, Based on Silver Sintering

Buttay, Cyril; Riva, Raphaël; Allard, Bruno; Locatelli, Marie-Laure; Bley, Vincent

doi:10.1109/iecon.2018.8591117

Cited by 6 publications

(5 citation statements)

References 28 publications

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“…This directly has an impact on the current capability of the modules. They should be applied with materials suitable for high temperature, such as paralene HT and, silver sintering with silver micro-particles paste [145]. Thermo-mechanical simulations show that doublesided cooling leads to decrease in junction temperature by 15-42% with sintered die attach for double-sided cooling simulations as compared to single sided cooling [146].…”

Section: New Layout Of Power Modulesmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Section: New Layout Of Power Modulesmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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“…The first manufacturing step consists in patterning blank DBC mastercards (Rogers-Curamik, 500 µm Cu/250 µm HPS Al 2 O 3 /500 µm Cu). To perform the 2-level copper etching with a sufficient resolution to contact small features such as the gate [9], [10].…”

Section: Manufacturingmentioning

confidence: 99%

“…The principle of the two-step etching technique is presented in Fig. 2, and fully detailed in [10]. Starting with a blank DBC substrate (a), a coat of photosensitive resin (MC Dip coating, Microchemicals) is applied by dip-coating (b).…”

Section: Manufacturingmentioning

confidence: 99%

“…Therefore, the SiC dies must be re-processed by e-beam evaporation of Ti (50 nm) and Ag (150 nm) through a shadow mask. This process is described in [10], and was found to provide a satisfying adhesion to the dies. Obviously, such re- processing would not be acceptable for industrial production, and dies with a suitable finish would be required instead.…”

Section: Manufacturingmentioning

confidence: 99%

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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Dchar¹,

Buttay²,

Morel³

2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Fail-to-short packages, which can still carry current after the failure of their semiconductor devices, are required for HVDC applications. However, all existing solutions are dedicated to silicon components. Here, a fail-to-short package is proposed for SiC devices. Its manufacturing process is described. 4 modules are built and submitted to intense short circuit currents (up to 2000 A). It is found that they offer a stable short-circuit failure mode, providing that the modules are mechanically clamped to prevent separation during the surge current test.

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“…In recent years, studies have mainly focused on the sintering process. Sintering parameters, such as sintering pressure, sintering temperature profile, the type of organic materials in the paste, the size distribution of the particles, metallization on bonding substrates, and the atmosphere in which the sintering takes place, were considered to reduce the void in the joints and improve bonding force [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Microstructure of Ag Nano Paste Joint and Its Influence on Reliability

2021

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In this paper, the microstructure of Ag nano paste joint was investigated in pressure-less sintering conditions, and the influence of the microstructure on the joint’s reliability was studied. Firstly, silver nanoparticles (Ag NPs) were synthesized using the redox reaction method. To tightly stack the Ag NPs in nano paste, Ag NPs with sizes of 30~50 nm and submicron-sized Ag particles were mixed. It was found that increasing the sintering temperature or sintering time can reduce the porosity of the bonding layer and the interfacial crack simultaneously, resulting in higher shear strength. When sintering at a temperature of 250 °C, a complete bonding interface was formed, with a 0.68 μm interdiffusion layer. At a higher temperature (300 °C), the bonding interface reached 1.5 μm, providing 35.9 ± 1.7 MPa of shear strength. The reliability of the die attachment was analyzed under thermal shocking from −65 °C to 150 °C for 50 cycles. As the crack could quickly grow through the interfacial defects, the separation ratio was 85% and 67% when sintered at 150 °C and 200 °C, respectively. Because of the reliable bonding interface between the die and the substrate, the Ag nano paste joint formed a slight crack on the edge of the die when sintering at 250 °C. When the joint was sintered at 300 °C, the small voids became large voids, which featured lower resistance to crack growth. Thus, instead of further improved reliability, the separation ratio increased to 37%.

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Packaging with Double-Side Cooling Capability for SiC Devices, Based on Silver Sintering

Cited by 6 publications

References 28 publications

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Microstructure of Ag Nano Paste Joint and Its Influence on Reliability

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