Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

doi:10.1109/apec.2019.8722126

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2021

2023

Publication Types

Select...

Other1

Article1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

Muravleva,

Canbaz,

Wang

et al. 2023

2023 IEEE Energy Conversion Congress and Exposition (ECCE)

View full text Add to dashboard Cite

Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

Muravleva,

Canbaz,

Wang

et al. 2023

2023 IEEE Energy Conversion Congress and Exposition (ECCE)

View full text Add to dashboard Cite

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Jacobs

Heinig

Johannesson

et al. 2021

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Recent advancements in silicon carbide (SiC) power semiconductor technology enable developments in the high-power sector, e.g., high-voltage direct current (HVdc) converters for transmission, where today silicon (Si) devices are state-of-theart. New submodule (SM) topologies for modular multilevel converters (MMCs) offer benefits in combination with these new SiC semiconductors. This paper reviews developments in both fields, SiC power semiconductor devices and SM topologies, and evaluates their combined performance in relation to core requirements for HVdc converters: grid code compliance, reliability, and cost.A detailed comparison of SM topologies regarding their structural properties, design and control complexity, voltage capability, losses, and fault handling is given. Alternatives to state-of-the-art SMs with Si insulated-gate bipolar transistors (IGBTs) are proposed, and several promising design approaches are discussed. Most advantages can be gained from three technology features. Firstly, SM bipolar capability enables dc fault handling and reduced energy storage requirements. Secondly, SM topologies with parallel conduction paths in combination with SiC metal-oxide-semiconductor field effect transistors (MOSFETs) offer reduced losses. Thirdly, a higher SM voltage enabled by higher blocking voltage of SiC devices results in reduced converter complexity. For the latter, ultra-high-voltage (UHV) bipolar devices, such as SiC IGBTs and SiC gate turn-off thyristors (GTOs), are envisioned. Index Terms-HVdc transmission, modular multilevel converter, power semiconductor devices, silicon carbide, submodules. I. INTRODUCTIONH VDC transmission technology requires integration into the existing alternating current (ac) grid. The conversion is performed via high-power converters. The modular multilevel converter (MMC) is a versatile and flexible topology with several options for optimization. MMCs have been intensively investigated since the early 2000's. It was identified, that modularity, scalability, built-in redundancy, and harmonic performance are advantageous for meeting widely varying requirements in grid applications. Compared to previous voltage source converters (VSC), the need for bulky harmonic filters is Keijo Jacobs

show abstract

Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Cited by 2 publications

References 9 publications

Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

Switch Cell Design for Novel High-frequency Press-pack SiC FET Modules

Comparative Evaluation of Voltage Source Converters With Silicon Carbide Semiconductor Devices for High-Voltage Direct Current Transmission

Contact Info

Product

Resources

About