P1.0.2 Hydrogen Gas Sensor Based on β-Ga2O3 Thin Film with a Function of Self Temperature Compensation

A Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism

“…1 A large energy bandgap, a high critical electric field and a small intrinsic carrier concentration make these materials suitable for the realization of electronic devices, which operate at temperature, voltage and frequency significantly higher than those based on silicon. Among these semiconductors, Ga 2 O 3 is considered very attractive for the realization of power electronics, [2][3][4][5][6] short wavelength photonics, [7][8][9] gas sensors 10,11 and spintronics devices. 12 Metal/semiconductor junction is the fundamental part of any electronic device, and its physical properties have a strong impact on the overall electrical performance.…”