Fabrication and electrical surface characterization of pellets of V2O5 nanostructures for robust and portable gas sensor applications

Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing

“…003-0397). , The reflection peaks (200) and (001) at 2θ ∼15.35 and ∼20.26°, respectively, correspond to the crystalline phase of the V 2 O 5 active switching layer [JCPDS Card no. 89-2482] . In addition, the XRD peaks (311) and (111) at 2θ ∼50.35 and ∼25.45°, respectively, are related to the NiMnIn bottom electrode. ,, The layer structure was confirmed by plotting the Raman spectra of the sputter-deposited V 2 O 5 active switching layer (Figure c).…”

“…003-0397). 47,48 The reflection peaks . 49 In addition, the XRD peaks (311) and (111) at 2θ ∼50.35 and ∼25.45°, respectively, are related to the NiMnIn bottom electrode.…”

Applicability of the MoS2–aSiC Heterostructure for Durable Supercapacitance and NO2 Gas Sensing in a Harsh Environment

“…The schematics of the sensing setup are illustrated in Figure b. The response of the sensor was calculated employing the following formula S = false| ( R − R normalo ) false| R normalo × 100 % Where S = sensor response, R = resistance of the sensor in the presence of the target gas, and R o = resistance of the sensor in the presence of air.…”

“…The success of expeditions for scientific exploration in these locations crucially depends on the payloads consisting of electronic devices manifesting stable responses under such conditions. Today, researchers focus on materials demonstrating stable device performance for various applications in extreme conditions. , It is usually observed that the highly active materials for some applications suffer from less stability. , For instance, metal oxides, transition-metal dichalcogenides (TMDs), metal nitrides, etc., exhibit high energy storage capability, but their stability in aqueous electrolytes is inferior. , These problems are usually caused by poor adhesion of the active materials to the substrate, loosely bound constituents of the materials, irreversible side product formation during device operation, structural deformations, etc. To overcome this issue, numerous techniques are being incorporated, such as composite and heterojunction formation, binder usage, porous substrates, employing suitable fabrication techniques such as one-step sputtering, etc .…”

“…For the stability of the active material in a harsh environment, the large number of alternate layers seems rational instead of a smaller number of thick layers due to the increased number of adhesive aSiC layers. The supercapacitor and gas sensor commonly work with a similar mechanism where adsorption and desorption of electrolyte ions and gas molecules, respectively, are required. , Therefore, the strategies to enhance the supercapacitor and gas sensor response are quite similar. It is usually carried out by increasing the active surface area by tailoring the morphology, surface modification by noble metal nanoparticle decoration, composite and heterostructure formation, doping with suitable materials, porosity enhancement, crystallinity tuning, grain boundary modification, etc.…”