p-Type NiO Hybrid Visible Photodetector

Mallows, John; Planells, Miquel; Thakare, Vishal; Bhosale, Reshma; Ogale, Satishchandra; Robertson, Neil

doi:10.1021/acsami.5b09291

Cited by 44 publications

(23 citation statements)

References 20 publications

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“…The changes in the acceptor concentrations for three samples are consistent with their photocurrent values, that is, the larger N A , the better photocurrent performance will be. While our result is different from the one reported by Mallows et al, 22 who showed that the higher oxygen pressure effectively increased the amount of nickel vacancies, leading to 1 order enhancement in acceptor concentrations.…”

Section: Results and Discussioncontrasting

confidence: 99%

Different Annealing Atmosphere Gases on the Growth and Photocurrent Performance of CuO Films Grown on FTO Substrate

Xia¹,

Luo²,

Zeng³

et al. 2018

ACS Omega

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Improvement in photocurrent performance remains the key subject to prepare a stable and efficient photocathode in photoelectrochemical cell (PEC) water splitting. Different to the ordinary methods, various annealing atmosphere gases were used to study the growth of CuO films on fluorine-doped tin oxide substrate; then, the photocurrent performance was studied when those CuO films were used as photocathodes in PEC. The scanning electron microscopy images indicate that all of the CuO films are composed of vertically arrayed CuO nanosheets, each individual nanosheet with a thickness of 100–500 nm. Those hierarchical CuO photoelectrodes in the PEC exhibit quite different photoelectrochemical activities in visible light, where the air-annealed CuO film has nearly 6 times enhancement in photocurrent (108 μA) at 0 V compared to that of film under oxygen atmosphere, and 34 times of argon. It has an acceptor concentration of 2.9 × 10 21 cm –3 from Mott–Schottky analysis, which is more than 2 times larger than that of the oxygen-annealed CuO film, and 37 times larger than that of the argon-annealed film. Ultraviolet photoelectron spectroscopy measurements were carried out to explain the improved photocurrent performance of the air-annealed CuO films, where the obtained valence band of 0.44 eV and work function of 4.92 eV well match the reduction reaction of electrolyte (H 2 O).

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Section: Results and Discussioncontrasting

confidence: 99%

Different Annealing Atmosphere Gases on the Growth and Photocurrent Performance of CuO Films Grown on FTO Substrate

Xia¹,

Luo²,

Zeng³

et al. 2018

ACS Omega

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“…The hybrid PDs based on p‐type organic molecules with tunable functionality and n‐type inorganic semiconductors with superior intrinsic carrier mobility, usually present high photodetecting performance, thanks to the efficient separation and transfer of photoinduced charge carriers resulting from the p‐n heterojunctions. Various kinds of organic materials, such as polyaniline (PANI),90 poly(vinyl alcohol) (PVA),91 poly(arcylonitrile) (PAN),27 poly(vinyl carbazole) (PVK),92 polypyrrole (PPy),93 and even pyrene‐tricyanofuran derivatives,94,95 are also adopted to modify the photoelectric properties of semiconductor‐based PDs 96…”

Section: Materials For Heterojunction Uv Pdsmentioning

confidence: 99%

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Chen

Ouyang

Yang

et al. 2020

Adv Funct Materials

317

206

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Ultraviolet photodetectors (UV PDs) with "5S" (high sensitivity, high signal-tonoise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize highperformance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.

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“…So far, PDs based on single crystal, film, and nanostructured materials have been applied for building designed PDs to detect ultraviolet [12][13][14], visible [15][16][17][18], or infrared [19][20][21][22][23][24][25] photons with actual needs. For example, highly narrow band (bandwidth of 10 nm) solar-blind photodetectors of β-Ga 2 O 3 single crystals with a peak responsivity of 0.23 A/W at 262 nm and an EQE of 110% were reported [26].…”

Section: Introductionmentioning

confidence: 99%

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

et al. 2020

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Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

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p-Type NiO Hybrid Visible Photodetector

Cited by 44 publications

References 20 publications

Different Annealing Atmosphere Gases on the Growth and Photocurrent Performance of CuO Films Grown on FTO Substrate

Different Annealing Atmosphere Gases on the Growth and Photocurrent Performance of CuO Films Grown on FTO Substrate

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

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