Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

Abstract

Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

“…Even in the case of heterostructures, the interface is replete with defects which alter its performance, hence interface engineering takes the center stage and interface carrier trapping/transport needs attention. [ 249 ] For example, Ar plasma pre‐treatment has been employed to alter the metal semiconductor surface resulting in localized oxygen deficiency and a sharper interface. This leads to a simultaneous increase in the sensitivity and response speed.…”

Using Novel Semiconductor Features to Construct Advanced ZnO Nanowires-Based Ultraviolet Photodetectors: A Brief Review

“…During the discussion process, several novel routes and semiconductor features, which are beneficial to construct advanced ZnO NWs/NRs-based UV photodetectors, are specifically introduced. For example, the surface passivation method, the inserting layer method [18], the interface engineering technique [97], the pyroelectric effect and the piezo-phototronic effect, and so on.…”

“…4 (b) shows that the recovery speed before SIG modulation is very slow because of the surface states. The photocurrent curve is divided into two exponential The interface engineering has been used to improve the performance of the ZnO NWs-based UV photodetectors [97], [110]- [115]. Usually, a rational inserting layer material is selected and embedded between ZnO NWs and the Schottky contact electrodes.…”

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

“…Photodetectors are devices that sense photons with specific wavelengths and convert them to electrical signals via photon/matter interaction 1 . They are an essential branch of optoelectronics with numerous applications, including photography, spectroscopy, characterization, optical communications, range finders, etc.…”