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We prepare CuCrO2 thin films with magnesium and nitrogen dopants. The solid state reaction method is employed to produce CuCrO2 targets with three different concentrations of Mg (0%, 2.5%, and 5%). The targets are used in an RF sputtering system to prepare thin films in the presence of N2 as the reactive gas. In this manner, Mg and N atoms, respectively, replace Cr and O sites in the CuCrO2 structure and enhance the electrical and optical properties of the host material. This cationic-anionic substitution yields a superior hole transport and results in an increased conductivity of ∼278 S cm−1 which is considered as a record for p-type conductivity in transparent conducting oxides. Moreover, the co-doped CuCrO2 demonstrates a bandgap of 3.52 eV and a transmittance of about 69% in the visible region.

A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic characteristics of our synthesized ZnO. The HVHC-ESD method enables the synthesis of ZnO nanorods with ultraviolet (UV) and visible emissions. To demonstrate the effectiveness of our prepared materials, we also fabricated two UV photodetectors based on the ZnO nanorods synthesized using the subsecond HVHC-ESD method. The UV-photodetector test under dark and UV light irradiation also had a promising result with a linear ohmic current−voltage output. In addition to the HVHC-ESD method's excellent tunability for ZnO properties, this method enables the rapid synthesis of ZnO nanorods in open air and water. The results demonstrate the preparation, highlight the synthesis of fine hexagonal-shaped nanorods under a second with controlled oxygen vacancies, and point defects for a wide range of applications in less than a second.

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