A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic characteristics of our synthesized ZnO. The HVHC-ESD method enables the synthesis of ZnO nanorods with ultraviolet (UV) and visible emissions. To demonstrate the effectiveness of our prepared materials, we also fabricated two UV photodetectors based on the ZnO nanorods synthesized using the subsecond HVHC-ESD method. The UV-photodetector test under dark and UV light irradiation also had a promising result with a linear ohmic current−voltage output. In addition to the HVHC-ESD method's excellent tunability for ZnO properties, this method enables the rapid synthesis of ZnO nanorods in open air and water. The results demonstrate the preparation, highlight the synthesis of fine hexagonal-shaped nanorods under a second with controlled oxygen vacancies, and point defects for a wide range of applications in less than a second.
For the first time, a hard wear-resistant multi-layer of TiCrN-TiAlN-TiAlSiN-TiAlSiCN was deposited on carbon steel CK45-based tillage tools to increase their useful lifetime. The layers were deposited by using an arc-PVD method without post-annealing procedures. XRD and EDX data indicated that TiCrN, TiAlN, TiAlSiN, and TiAlSiCN formed individually and as a multi-layer of high-quality crystalline layers with mostly cubic structures. The studies on the multi-layers coating morphology, roughness and hardness gave reasonable results as a roughness of 35 nm and a hardness of 32.2 GPa. The coated sweep duck blade tillage tools were tested on the field along with a soil bin to obtain their wear behavior at different traveling distances. The draft force of all blades showed promising results. As the coated layers were worn off, their draft force increased. In comparison with single-layer coatings, the multi-layer structure demonstrated an increase in the useful lifetime of the blades.
Delafossite CuGaO2 (CGO) as an emerging semiconductor
is considered as a promising p-type material in electro-optics. The
use of CGO in the semiconductor industry requires addressing the challenges
encountering this material. One of the most significant issues in
the technology development for the inclusive usage of this material
is the proper choice of electrical connection. The Schottky barrier
formed at the CGO/metal interface can be a restrictive and/or effective
factor in electron transfer in electronic and electro-optical devices.
In addition, the imperative Fermi level pinning (FLP) phenomenon makes
the proper choice of the metal contact more thoughtful. In this research,
we study the electronic properties of the CGO/metal interface and
take into account the FLP phenomenon to select the appropriate metal
contact for the required operation of the CGO-based devices. We look
more closely at the Schottky to Ohmic connection transition. Technology
computer-aided design (TCAD) simulations show that the FLP effect
alters the Schottky barrier height (SBH) between CGO and the metal
contact, reducing the dependence of the SBH on the metal’s
work function. The hole concentration in CGO is varied between 1014 and 1021 cm–3, which changes
the SBH and the Schottky to Ohmic transition condition. The results
show that the CGO-based photodetector may get a responsivity of 0.371
and 5.570 A/W, respectively, for the Schottky and Ohmic modes.
A new deposition formation was observed with a Mather-type Plasma Focus Device (MPFD). MPFD was unitized to fabricate porous Gallium Nitride (GaN) on p-type Silicon (Si) substrate with a (100) crystal orientation for the first time in a deposition process. GaN was deposited on Si with 4 and 7 shots. The samples were subjected to a 3 phase annealing procedure. First, the semiconductors were annealed in the PFD with nitrogen plasma shots after their deposition. Second, a thermal chemical vapor deposition annealed the samples for 1 h at 1050 °C by nitrogen gas at a pressure of 1 Pa. Finally, an electric furnace annealed the samples for 1 h at 1150 °C with continuous flow of nitrogen. Porous GaN structures were observed by Field emission scanning electron microscopy and atomic force microscopy. Furthermore, X-Ray diffraction analysis was carried out to determine the crystallinity of GaN after the samples were annealed. Energy-Dispersive X-Ray Spectroscopy indicated the amount of gallium, nitrogen, and oxygen due to the self-oxidation of the samples. Photoluminescence spectroscopy revealed emissions at 2.94 eV and 3.39 eV, which shows that hexagonal wurtzite crystal structures were formed.
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