p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

Sharif, Muhammad Nawaz; Niass, Mussaab I.; Liou, Juin J.; Wang, Fang; Liu, Yuhuai

doi:10.1016/j.spmi.2021.107022

Cited by 23 publications

(6 citation statements)

References 43 publications

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“…Based on the work of Arora [46], the Functions of electron and hole mobility variation are calculated. The SRH recombination lifetime, radiative recombination coefficient, Auger recombination coefficient, and energy band offset ratio simulation parameters were selected as 0.58, 0.2 × 10 16 m 3 s, 100 ns, and 1 × 10 46 m 6 s accordingly [47,48].…”

Section: Parameters For Simulationmentioning

confidence: 99%

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Rehman,

Rahman,

Haq

et al. 2024

Phys. Scr.

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As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavelength of 263.7 nm. By implementing this approach, we anticipate achieving higher optical output power by 6%, enhancing the concentration of electron and hole, and reducing the electron current density (356.1 to 342.8) and threshold voltage (4.516 to 4.5 V), and hole current density increases in AlGaN-based ultraviolet LDs. These promising outcomes can be attributed to the effective conduction band barrier height achieved by the optimized electron-blocking layer (EBL).

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Section: Parameters For Simulationmentioning

confidence: 99%

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Rehman,

Rahman,

Haq

et al. 2024

Phys. Scr.

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“…[11][12][13] In most of the schemes, the external quantum efficiency (EQE) and wall-plug efficiency (WPE) of AlGaN-based DUV-LEDs are still below 10% and cannot be compared with those of InGaN-based blue LEDs. [14][15][16] It has been reported that electron leakage and insufficient hole injection are the critical factors hindering the quantum efficiency enhancement of DUV-LEDs. [1,17] A p-AlGaN layer with a wider bandgap is generally inserted between the p-type layer region and the active region as an electron blocking layer (EBL) to suppress the electron leakage.…”

Section: Introductionmentioning

confidence: 99%

“…[ 11–13 ] In most of the schemes, the external quantum efficiency (EQE) and wall‐plug efficiency (WPE) of AlGaN‐based DUV‐LEDs are still below 10% and cannot be compared with those of InGaN‐based blue LEDs. [ 14–16 ]…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Cao

et al. 2023

Physica Status Solidi (a)

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The performance improvements of AlGaN‐based deep ultraviolet light‐emitting diodes (DUV‐LEDs) with multigradient electron blocking layer (EBL) and triangular last quantum barrier (LQB) are investigated. The results show that the maximum internal quantum efficiency (IQE) is improved by 44.9% and light output power (LOP) is improved by 58.1% at 200 A cm−2, exhibiting a tremendous improvement compared to the conventional structure. These improvements are mainly attributed to the fact that both multigradient EBL and triangular LQB can generate negative polarization charges in the graded composition layer, which leads to a significant increase in hole concentration compared to the conventional EBL and LQB structures. Meanwhile, the multigradient EBL can transform the conventional triangular barrier into an arc‐shaped barrier, increasing the electron potential barrier height and decreasing the hole potential barrier height. This unique design suppresses electron leakage and enhances hole injection, leading to a significant enhancement of the IQE and alleviation of the efficiency droop.

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“…[ 27 ] In order to increase the carrier distribution in the active zone while lowering the electric field strength and increasing the rate of electron and hole wave function overlap, Muhanmmd et al doped a small amount of In into p‐AlGaN and used a superlattice design. [ 28 ] In summary, many research directions can be used as a reference for improving the performance of DUV‐LED in the future. Although it can effectively improve the carrier transmission efficiency and optical output power, many studies are conducted on the basis of sacrificing the working voltage and reducing turn‐on voltage, which are not conducive to solve the poor heat dissipation, LED damage, and reliability reduction caused by excessive voltage in the actual use of the product.…”

Section: Introductionmentioning

confidence: 99%

Efficient Carrier Confinement in AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with a Composition‐Graded Electron‐Blocking Layer

Cheng

Ren

et al. 2022

Physica Status Solidi (a)

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The serious electron leakage and poor transport of hole injection layers in deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) lead to an imbalance between the hole and electron currents, which reduces the device's performance. Herein, a new DUV LED structure is designed. The aluminum composition of the p‐type electron‐blocking layer (p‐EBL) gradually decreases from 0.95 to 0.75 along the growth direction, replacing the traditional bulk p‐EBL. When the injection current is 100 mA, the optical power of this structure is about 32% higher than that of the traditional structure. In addition, when the p‐EBL adopts the opposite gradient (the Al composition gradually increases from 0.75 to 0.95), the device performance suddenly drops dramatically. The related devices are simulated by Silvaco TCAD software. The results show that the performance outputs of the two opposite aluminum gradient growth modes are completely opposite. The proposed p‐EBL with a gradual step‐down Al composition along the growth direction helps to improve the efficiency of hole injection into multiple quantum wells (MQWs) and reduce the level of electron leakage. This work provides an effective solution for increasing the light output power of high‐performance DUV LEDs.

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p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

Cited by 23 publications

References 43 publications

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

Performance Improvement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Efficient Carrier Confinement in AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with a Composition‐Graded Electron‐Blocking Layer

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