P‐129: Zero‐Stress Thin‐film Encapsulation Method for Increasing the Intrinsic Stability of Flexible OLEDs

Jeong, Eun Gyo; Lim, Myung Sub; Choi, Kyung Cheol

doi:10.1002/sdtp.12011

Cited by 6 publications

(6 citation statements)

References 11 publications

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“…Unfortunately, thin-film structures usually suffer high mechanical stresses (residual stresses) [9,10]. These mechanical stresses are consistent with all thin-film structures for all deposition techniques.…”

Section: Introductionsupporting

confidence: 72%

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

Mbam¹

2021

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For multilayer film structures, mechanical failure is usually taken place at the interface. To deeply understand the typical issue, it is first essential to know the stress status at the interlayer surface. For this aim, in this work, the author presented displacement-energy models (DEM) for accurately calculating the interfacial stress in multilayer film structures and the impact of the morphology and size of the interacting grains at the interface. The stress-inducing mechanisms are related to the displacement-energy phenomenon of the interacting grains in the structure caused by the deposition technique. In contrast, the interfacial residual stress-evolution in the deposited films is determined from the change in the lattice constant between interacting grains as a function of temperature and time during the deposition and cool-down process. The interacting grains understudied have different morphology with flat and curved surfaces and sizes. Concerning the yttrium barium copper oxide (YBCO) films deposited on the lanthanum aluminum oxide (LaAlO 3 ) substrate, the computed results showed that the morphology and size of the interacting grains affect the net interfacial residual stresses in the YBCO films significantly. Also, the results of the DEM models agree well with the measured value by the X-ray diffraction method (XRD). Specifically, the computed stress in the YBCO films for the interacting grains with spherical surfaces is 0.18 GPa. Similarly, that measured by the XRD method is 0.178± 0.053 GPa. In the future, the findings of this study could be essential in the defect inspection of several Multilayer Engineering Materials, including composites for various applications, which often consist of grains with different morphology and size.

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Section: Introductionsupporting

confidence: 72%

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

Mbam¹

2021

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“…The highest WVTR value was not the 40 pairs due to the total residual stress of the thin film layer which accumulated with the increasing thickness of the layer (based on the Stoney formula) and so the destruction caused by the accumulation residual stress occurred. [ 191 ] Thus, suitable layer numbers and thickness are important to achieve high barrier performance. For OLED devices, the WVTR of single layer of Al 2 O 3 film was only 0.409 g m −2 day −1 .…”

Section: Encapsulation Classification and Techniquementioning

confidence: 99%

Section: Encapsulation Classification and Techniquementioning

confidence: 99%

A Review on Encapsulation Technology from Organic Light Emitting Diodes to Organic and Perovskite Solar Cells

Lü

Yang

Meng

et al. 2021

Adv Funct Materials

142

128

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Organic light emitting diodes (OLEDs) employing organic thin‐film based emitters have attracted tremendous attention due to their widespread applications in lighting and as displays in mobile devices and televisions. The novel thin‐film photovoltaic techniques using organic or organic–inorganic hybrid materials such as organic photovoltaics (OPVs) and perovskite solar cells (PSCs) have become emerging competitive candidates with regard to the traditional photovoltaic techniques on account of high‐efficiency, low‐cost, and simple manufacturing processing properties. However, OLEDs, OPVs, and PSCs are vulnerable to the undesired degradation induced by moisture and oxygen. To afford long‐term stability, a robust encapsulation technique by employing materials and structures that possess high barrier performance against oxygen and moisture must be explored and employed to protect these devices. Herein, the recent progress on specific encapsulation materials and techniques for three types of devices on the basis of fundamental understanding of device stability is reviewed. First, their degradation mechanisms, as well as, influencing factors are discussed. Then, the encapsulation technologies and materials are classified and discussed. Moreover, the advantages and disadvantages of various encapsulation technologies and materials coupled with their encapsulation applications in different devices are compared. Finally, the ongoing challenges and future perspectives of encapsulation frontier are provided.

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“…S1c and d (ESI †). 24 Therefore, to address this issue, we applied an external force in situ to prebend the substrates during the ALD-Al 2 O 3 fabrication (Fig. 2a).…”

Section: Effect and Characterization Of Residual Stresses In Ald-al 2 Omentioning

confidence: 99%

“…S1b-d The same thickness of ALD-Al 2 O 3 was grown on the top and bottom surfaces of the substrate to achieve mutual stress cancellation. 24 Although these methods can largely relieve stress, application to small-radius foldable or wearable devices still remains challenging. If the ALD-Al 2 O 3 monolayer film has better flexibility to achieve independent flexible encapsulation performances, it would undoubtedly reduce the preparation process and realize ultra-flexible optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Complete stress release in monolayer ALD-Al₂O₃ films based on mechanical equilibrium homeostasis to realize a bending radius of 1 mm

et al. 2022

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P‐129: Zero‐Stress Thin‐film Encapsulation Method for Increasing the Intrinsic Stability of Flexible OLEDs

Cited by 6 publications

References 11 publications

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

A Review on Encapsulation Technology from Organic Light Emitting Diodes to Organic and Perovskite Solar Cells

Complete stress release in monolayer ALD-Al₂O₃ films based on mechanical equilibrium homeostasis to realize a bending radius of 1 mm

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P‐129: Zero‐Stress Thin‐film Encapsulation Method for Increasing the Intrinsic Stability of Flexible OLEDs

Cited by 6 publications

References 11 publications

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

A Displacement-energy Model Approach for Evaluating the Interfacial Stress in Multilayer Film Structures Based on the Interactions of Grains at the Interface

A Review on Encapsulation Technology from Organic Light Emitting Diodes to Organic and Perovskite Solar Cells

Complete stress release in monolayer ALD-Al2O3 films based on mechanical equilibrium homeostasis to realize a bending radius of 1 mm

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Complete stress release in monolayer ALD-Al₂O₃ films based on mechanical equilibrium homeostasis to realize a bending radius of 1 mm