“…Moreover, the positive slope of the Mott–Schottky plots for the WC‐N/W‐1200 sample indicates the n ‐type nature (Figure S7, Supporting Information). [ 29 ] The resultant Schottky barrier will obviously cause the redistribution of electrons at the interface between W and WC, and gradually enrich the positive charge on the metal W side. [ 1a,5,30 ] At high temperatures, a large amount of N atoms should be doped into the WC lattice, resulting in the formation of various types of defects, such as lattice distortion, vacancies, twin‐crystal, and edge dislocation structures, as shown in Figure 3b–e, respectively.…”