Oxygen incorporation into GST phase-change memory matrix

Golovchak, R.; Choi, Yong Gyu; Kozyukhin, S. A.; Chigirinsky, Yu I.; Kovalskiy, A.; Xiong-Skiba, P.; Trimble, Jeremy; Pafchek, R.; Jain, Himanshu

doi:10.1016/j.apsusc.2015.01.203

Cited by 52 publications

(26 citation statements)

References 36 publications

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“…Ge-rich compositions of the Ge-Sb-Se system are preferable for molded lens application since thermal and mechanical properties are better in these compositions [4]. M x Sb y (S,Se,Te) z materials exhibit important phase-change kinetics for high switching speed and high reliability of random access memory [5,6] and high thermoelectric properties [7][8][9]. The Sn-Sb-S system is recently investigated in the field of photovoltaic, since researches are directed towards the development of cost-effective and nontoxic materials that can be synthesized by a simple technology for solar cell fabrication [10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Abdelkader

Akkari

Khémiri

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Abdelkader

Akkari

Khémiri

et al. 2015

Journal of Alloys and Compounds

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“…In this section, we successfully realize two examples of wavefront switching AM based on nanostructured GST which provides broad operational bandwidth with tiny noises. To incorporate our devices in real application systems, simple SiO 2 deposition process can cover durability issues such as oxidation or thermal degradation . Apart from presented applications, we can design other various active wavefront modulation devices such as tunable vortex beam generator and focal spot switchable metalens.…”

Section: Resultsmentioning

confidence: 99%

Metasurface with Nanostructured Ge₂Sb₂Te₅ as a Platform for Broadband‐Operating Wavefront Switch

Choi

Lee

Mun

et al. 2019

Advanced Optical Materials

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Broadband‐operating active devices within a small‐footprint are highly on demand in various nanophotonic fields such as fiber‐optic communication systems and chip‐based integrated optical circuits. As pioneering approaches, diverse platforms of active metasurfaces (AMs) have been proposed due to their superior tunable functionality and ultra‐compact size. However, most of previous researches provide only limited operating bandwidth because they generally rely on resonant light–matter interaction between active material and plasmonic antenna. In this study, an active wavefront switching metasurface that can operate over 500 nm bandwidth at near‐infrared spectral bands is experimentally realized by utilizing nonresonant U‐shaped Ge2Sb2Te5 nanoantennas. Two different sizes of the U‐shaped antenna are designed to exhibit large transmittance contrast and their optical phases are determined by imposing the orientation angle variation. As an example of the functionality, anomalous refraction angle switching and dispersionless active hologram are demonstrated. The devices provide high signal‐to‐noise ratio (>7 dB) for overall operation bandwidth. It is believed that the proposed AMs can be an innovative platform for real device application thanks to their not only broadband and low‐noise operation but also fast speed, low power consumption switching within a small‐footprint.

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“…Useful mechanical properties may be a factor in ensuring the endurance of PCM, which is mainly affected by fatigue properties, thermal and mechanical stability. [37,38] In this study, the superlattice-like structure of [GaSb(x)/ GST(y)] 3 systems is suggested and investigated, we focus on the GaSb layer as a possible candidate to form a superlatticelike structure with GST. The properties of multilayer films were closely related to the layer thickness of the incorporated materials, [39] the phase transition behaviors as a function of the layer thicknesses of GaSb were investigated.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge₂Sb₂Te₅ Phase Change Thin Films

Yin

Wang

et al. 2021

Adv Materials Inter

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lower thermal conductivity of superlattice thin films compared to that of bulk materials. [8][9][10] In recent years, superlattice structure PCM has drawn the most attention in the field since they reduce the energy consumption while can still maintain other good performances (such as density, speed, endurance, and signal contrast) and realize controllable multilevel storage to increase storage density. [11][12][13] From the viewpoint of thermodynamics, the smaller the cell size, the less the input energy can be, thus superlattice structure phase change materials were theoretically designed based on suppressing the ratio of a mixing entropy from the beginning and reducing the energy consumption. [14] The explanation for these improvements is still under debate, their atomic structure and switching mechanism need to be explored. [15] Materials with two or three metastable intermediate resistance levels are promising candidates for multi-level data storage devices. [16][17][18] A multilayer PCM thin film generally comprises two PCM constituents alternatively deposited, with one phase of high phase change speed and the other phase of good amorphous stability. Most PCM materials are compounds located in pseudo-binary line GeTe-Sb 2 Te 3 showing high distinguishable phases and cyclability, scalability. [19][20][21] However, a few studies showed that superlattice-like structures of GeTe-Sb 2 Te 3 exhibit the tendency to intermix during deposition. [22][23][24][25][26] Searching for new compositions with other elements should be a promising way to further optimize the superlattice-based PCM. The crystallization temperature of Sb 2 Te 3 is too low to be utilized in practical products. [27] Ge 2 Sb 2 Te 5 is the core composition in almost all PCMs owing to comprehensive properties, it was reported by Yamada et al. [28,29] GaSb layer has also been proposed for phase change materials since their unique crystallization process is effective in enhancing thermal stability. [30][31][32] Especially, Ga-Sb thin films exhibited an unusual behavior with a decreasing mass density upon crystallization compared to GeTe thin films, [33] which can compensate for an increased density of GST thin films. The recent studies [9,34] evidenced that the superlattice PCM provides an effective means to tune and balance the properties such as thermal stability and read/write speed of the device. On the other hand, the mechanical properties of superlattice thin films have been proved to show abnormal effects with super-hardness and super-modulus in certain ranges.

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Oxygen incorporation into GST phase-change memory matrix

Cited by 52 publications

References 36 publications

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Metasurface with Nanostructured Ge₂Sb₂Te₅ as a Platform for Broadband‐Operating Wavefront Switch

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge₂Sb₂Te₅ Phase Change Thin Films

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Oxygen incorporation into GST phase-change memory matrix

Cited by 52 publications

References 36 publications

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

Metasurface with Nanostructured Ge2Sb2Te5 as a Platform for Broadband‐Operating Wavefront Switch

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge2Sb2Te5 Phase Change Thin Films

Contact Info

Product

Resources

About

Metasurface with Nanostructured Ge₂Sb₂Te₅ as a Platform for Broadband‐Operating Wavefront Switch

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge₂Sb₂Te₅ Phase Change Thin Films