Oxygen diffusion and thermal donor formation in silicon

Gösele, U.; Tan, T. Y.

doi:10.1007/bf00617135

Cited by 279 publications

(64 citation statements)

References 88 publications

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“…It was observed that the out-diffusion of oxygen as well as of carbon is enhanced in the case of the presence of high concentrations of interstitial oxygen and substitutional carbon and leads to about the same enhanced diffusivity [40]. It is tempting to speculate that oxygen and carbon form either a molecular C i O i complex (corresponding to a CO molecule) or a corresponding CO 2 molecule which may be fast diffusing entities in silicon similar as suggested for O 2 in silicon [41]. Such a fast diffusing entity may play a significant role in the diffusion behavior of grown-in carbon in silicon as discussed in the next section.…”

Section: Oxygen Effectsmentioning

confidence: 84%

Diffusion Engineering by Carbon in Silicon

et al. 2000

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The possibility to suppress undesirable diffusion of the base dopant boron in siliconbased bipolar transistor structures by the incorporation of a high concentration of carbon has lead to renewed interest in the behavior of carbon in crystalline silicon. The present paper will review essential features of carbon in silicon including solubility, diffusion mechanisms and precipitation behavior. Based on this information the possibilities to use carbon to influence diffusion of dopants in silicon by the introduction of non-equilibrium concentrations of intrinsic point defects will be discussed as well as the reason for the relatively high resilience against carbon precipitation. Interactions between carbon and oxygen will be mentioned, especially in the context of an as yet unexplained fast out-diffusion of carbon close to the surface.

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Section: Oxygen Effectsmentioning

confidence: 84%

Diffusion Engineering by Carbon in Silicon

et al. 2000

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“…Silicon vacancies containing two or more oxygen atoms have been considered as possible candidates for thermal donors [17], [18]. Unlike standard dopants, thermal donors can introduce multiple energy levels in the bandgap, leading to a double donor behavior [19].…”

Section: B Thermal Donor Imagingmentioning

confidence: 99%

“…Detailed information on the properties of thermal donors in silicon can be found in [17] and [18]. The undesirable effects introduced by the thermal donors can be effectively deactivated through high-temperature annealing of 650…”

Section: B Thermal Donor Imagingmentioning

confidence: 99%

Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

Lim

Forster²,

Zhang

et al. 2013

IEEE J. Photovoltaics

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Abstract-Photoluminescence-based imaging is most commonly used to measure the excess minority carrier density and its corresponding lifetime. By using appropriate surface treatments, this high-resolution imaging technique can also be used for majority carrier concentration determination. The mechanism involves effectively pinning the minority excess carrier density, resulting in a dependence of the photoluminescence intensity on only the majority carrier density. Three suitable surface preparation methods are introduced in this paper: aluminum sputtering, deionized water etching, and mechanical abrasion. Spatially resolved dopant density images determined using this technique are consistent with the images obtained by a well-established technique based on free carrier infrared emission. Three applications of the technique are also presented in this paper, which include imaging of oxygenrelated thermal donors, radial dopant density analysis, and the study of donor-related recombination active defects. These applications demonstrate the usefulness of the technique in characterizing silicon materials for photovoltaics.

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“…18 -20 A popular model used to describe the TDD formation assumes that only the oxygen dimer (O 2 ) acts as a FDS. 20,21 The TDD formation would then proceed as follows: 11,17,20,22,23 O 2 ϩO 2 TDD1,…”

Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theoretically through density-functional total-energy calculations. We find that the stablest oxygen complexes are straight chains that also have the lowest migration energies. The calculated migration energies decrease from 2.3 eV for an interstitial oxygen atom (O i ) to low values of 0.4 -1.6 eV for O 2 -O 9 chains and 1.9-2.2 eV for longer chains. The oxygen chains ͑which are thermal double donors͒ are expected to grow so that the migrating oxygen chains capture less-mobile but abundant O i 's: O n ϩO i →O nϩ1 . Restructuring energies of chains with a side O i into straight oxygen chains are 1.9-2.5 eV. Restructuring gives an essential contribution to the fast diffusion. We find that the shorter O 2 -O 9 chains dissociate primarily by ejecting one of the outermost oxygen atoms.

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Oxygen diffusion and thermal donor formation in silicon

Cited by 279 publications

References 88 publications

Diffusion Engineering by Carbon in Silicon

Diffusion Engineering by Carbon in Silicon

Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

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