Oxygen and indium diffusion into SiO2 encapsulated polycrystalline CdSe films

Langford, R. M.; Lee, M. J.; Wright, S. W.; Judge, C. P.; Chater, Richard J.; Tate, T.J.

doi:10.1007/bf02657712

Cited by 4 publications

(1 citation statement)

References 47 publications

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“…A further reason might be a different impurity concentration in the grain boundaries of the investigated low-and high-alumina materials. Langford et al 20 have determined activation enthalpies that are larger in the grain boundaries than in the bulk for oxygen and indium diffusion into SiO 2 -encapsulated polycrystalline CdSe films. To explain this result, the authors assume that impurities and intrinsic defects accumulate at the grain boundaries during the adhesion bake and decrease the number of vacancy sites in the grain boundary along which diffusive transport can occur.…”

Section: Discussionmentioning

confidence: 99%

Oxygen Grain‐Boundary Diffusion in Polycrystalline Mullite Ceramics

Fielitz

Borchardt

Schmücker

et al. 2004

Journal of the American Ceramic Society

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Oxygen tracer diffusivities of low‐ and high‐alumina mullite ceramics (72 wt% Al2O3, 28 wt% SiO2 and 78 wt% Al2O3, 22 wt% SiO2, respectively) were determined. Gas/solid exchange experiments were conducted in an atmosphere enriched in the rare stable isotope 18O, and the resulting 18O isotope depth distributions were analyzed using SIMS depth profiling. The investigation showed that grain‐boundary diffusivities for both mullite ceramics were several orders of magnitude higher than mullite volume diffusivity. Activation enthalpies of oxygen diffusion were 363 ± 25 kJ/mol for the low‐alumina and 548 ± 46 kJ/mol for the high‐alumina materials. Because the glassy grain‐boundary films were not identified, the differences between the low‐ and high‐alumina materials might be explained by different impurity concentrations in the grain boundaries of the two materials.

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Section: Discussionmentioning

confidence: 99%