Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition ͑ALD͒ of ruthenium on SiO 2 and HfO 2 surfaces using bis-͑cyclopentadienyl͒ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is 4.84± 0.1 eV on SiO 2 , and the effective work function is reduced on HfO 2 /SiO 2 layers.

Optical cavities can enhance and control light-matter interactions. This level of control has recently been extended to the nanoscale with single emitter strong coupling even at room temperature using plasmonic nanostructures. However, emitters in static geometries, limit the ability to tune the coupling strength or to couple different emitters to the same cavity. Here, we present tip-enhanced strong coupling (TESC) with a nanocavity formed between a scanning plasmonic antenna tip and the substrate. By reversibly and dynamically addressing single quantum dots, we observe mode splitting up to 160 meV and anticrossing over a detuning range of ~100 meV, and with subnanometer precision over the deep subdiffraction-limited mode volume. Thus, TESC enables previously inaccessible control over emitter-nanocavity coupling and mode volume based on near-field microscopy. This opens pathways to induce, probe, and control single-emitter plasmon hybrid quantum states for applications from optoelectronics to quantum information science at room temperature.

Articles you may be interested inPhotodissociation dynamics of 3-bromo-1,1,1-trifluoro-2-propanol and 2-(bromomethyl) hexafluoro-2-propanol at 234 nm: Resonance-enhanced multiphoton ionization detection of Br (2 P j )The photolysis of CH 3 Br is studied in the energy region of the A band between 4.94 and 5.76 eV using ion imaging. Velocity distributions for both the bromine-atom and methyl-radical photofragments are determined. Our results indicate that transitions to the 3 Q 0 and 3 Q 1 states dominate the absorption cross section and the partial cross section to each state is determined. The ͓Br*͔/͓Br͔ branching ratio is found to be strongly dependent on the excitation energy varying between 0.6 and 1.5. Both the bromine-atom and the methyl-radical translational energy distributions suggest that the vibrational distribution in the nascent CH 3 is nonstatistical with appreciable excitation in the v 2 umbrella mode. The lifetime of the A band is estimated at ϭ120Ϯ40 fs.

Abstract

HfO 2 thin films have been deposited by an atomic layer deposition (ALD) process using alternating pulses of tetrakis-ethylmethylamino hafnium and H2O precursors at 250 °C. The as-deposited films are mainly amorphous and nearly stoichiometric HfO2 (O/Hf ratio ∼1.9) with low bonded carbon content (∼3 at. %). A comparison of the nucleation stage of the films on OH- and H-terminated Si(100) surfaces has been performed using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). We find for the initial 5–7 process cycles that the film nucleates more efficiently on the OH-terminated surface. However, after the 7th cycle both surfaces exhibit similar surface coverage, which takes about 40 cycles to reach a steady growth rate per cycle. Angle resolved XPS measurements reveal the formation of a ∼6 Å interfacial layer after four ALD cycles on the H-terminated surface and the thickness of the interfacial layer does not change substantially between the 4th and the 50th process cycles as shown by transmission electron microscopy. Although the surface coverage is comparable for both starting surfaces, film measurements performed by SE suggest that thick films deposited on H-terminated Si are ∼5% thicker than similar films on the chemical oxide surface. Atomic force microscopy (AFM) measurements reveal higher surface roughness for the films deposited in the H-terminated surface. The SE and the AFM data are consistent with higher porosity for the films on H-terminated surfaces.

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In this article, we present data on the properties of La-based high-k dielectric films prepared by oxidation of La deposited by physical vapor deposition on silicon. Films are characterized by x-ray photoelectron spectroscopy, infrared absorption, and capacitance versus voltage analysis. We find that when we oxidize La metal sputter deposited on Si substrates, it reacts with the silicon substrate to form La silicate. La films as thick as 300 Å will react completely with Si under moderate oxidation conditions (900 °C for 10 min) suggesting a very rapid silicidation reaction between La and Si. Under some processing conditions the as-deposited films contain a small La2O3 component that reduces to La silicate upon anneal at high temperatures. La-silicate films do not phase separate into La2O3 and SiO2 upon annealing at 1050 °C, and their resistance to H2O incorporation depends critically on the oxidation temperature. Electrical measurements show a high concentration of positive fixed charge.