Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Abstract

A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.

Investigation of the role of electrodes on the retention performance of HfO<inf>x</inf> based RRAM cells by experiments, atomistic simulations and device physical modeling

“…Furthermore, R off values for Pt/Pt and TiN/Ti samples measured at different temperatures showed that R off for Pt/Pt increases with rising T and never restores its initial value after cycling back to room temperature (Fig. 7a) while for TiN/Ti, R off does decrease with temperature [13,14] and restores its initial state (Fig. 7b).…”

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

“…The tables here only cover a subset of the huge collection of published resistive switching devices. Others transport models that requires iterative or numerical calculation, such as Menzel model [93], domain-based model [94,95], drift-diffusion model [96], ion-transport-recombination model [97][98][99] and hourglass model [100,101] are deliberately omitted in this article.…”

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

“…16 Such an oxygen-ion-transport model is quite applicable to n-type metal oxide systems with either bipolar or unipolar switching. 17 Furthermore, the recent observation of multilevel resistive random access memory 10,[18][19][20] at the sublithographic scale in a single resistive switching cell provides a pathway to achieving ultrahigh-density memory. The multilevel memory effects occur through the formation and rupture of conducting paths with different widths and/or quantities.…”