Oxide based compound semiconductor electronics

Mishra, Umesh K.; Parikh, P.; Chavarkar, P.; Yen, J.C.; Champlain, James G.; Thibeault, B.J.; Reese, H.; Shi, Sun; Hu, Evelyn L.; Zhu, Lihua; Speck, J. S.

doi:10.1109/iedm.1997.650443

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…This section considers the oxidation of GaAs and Al-containing III-V materials. Al-containing oxides on AlGaAs and InAlAs [10][11][12][13] and InAlP [14][15][16][17] have been found to possess good insulating properties which make the films potentially useful for some device applications.…”

Section: Iii-v Semiconductorsmentioning

confidence: 99%

Modern Analytical Techniques in High Temperature Oxidation and Corrosion

Graham¹

2006

MSF

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Modern analytical techniques are useful to characterize oxide films and to study oxide growth processes. This paper will summarize some of our work on the high temperature oxidation of both metals and semiconductors. Systems considered include binary III-V semiconductors, e.g. GaAs, which unlike silicon does not normally form high-quality native oxide. For GaAs, the influence of deuterium in the substrate and surface platinum have been evaluated with respect to oxide growth. Both aluminum-containing alloys (FeCrAl and NiAl) and semiconductors (AlGaAs, InAlAs and InAlP) are included. The objective is to produce good quality protective and insulating aluminum-containing oxides. In these studies, the application of several modern surface- analytical techniques, particularly Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry, complemented by other techniques, e.g. transmission electron microscopy and X-ray analysis provides useful information on the chemical composition of the oxides and leads to a better understanding of oxidation and corrosion phenomena. In the case of AlGaAs and InAlP, thermal oxidation produces aluminum-containing oxides that have good insulating characteristics which makes the oxide films potentially useful for some device applications.

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Section: Iii-v Semiconductorsmentioning

confidence: 99%

Modern Analytical Techniques in High Temperature Oxidation and Corrosion

Graham¹

2006

MSF

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“…1) [1]. The design is based on a current aperture vertical electron transistor (CAVET) in which the drain-layer is buried underneath the channel region [2], [3]. Using the technique of direct wafer-bonding in a CAVET enables integration of epitaxially distinct material systems for the channel and drift-regions.…”

Section: Introductionmentioning

confidence: 99%

Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

Lal

Gupta

et al. 2013

IEEE Electron Device Lett.

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A unipolar transistor consisting of an In 0.53 Ga 0.47 As (InGaAs) channel and a III-Nitride (III-N)-based drain-region with a maximum on-current of 192 mA/mm is reported. This unique device is realized by employing waferbonding to a current aperture vertical electron transistor and is referred to as a wafer-bonded aperture vertical electron transistor (BAVET). An In 0.52 Al 0.48 As/InGaAs layer-stack is used for the gate-barrier and channel regions, while the aperture, current-blocking-layer (CBL) and drift regions are part of the III-N layer structure. This letter investigates the factors affecting the off-characteristics of a BAVET by varying the overlaps of the gate-CBL (L GO ) and gate-aperture (L GA ) regions. A dual-functionality of modulating the channel and providing a field-plate effect is realized using the L GO and L GA parts of the gate, respectively. We report that the improvement in channel-pinch off is a stronger function of L GA than it is of L GO . A weak pinch off in the InGaAs channel is shown to be the consequence of impact-ionization leading to channel-breakdown, and using a gate-aperture overlap dramatically improves both the pinch off and off-state-breakdown in BAVETs.Index Terms-Bonded aperture vertical electron transistor (BAVET), current aperture vertical electron transistor (CAVET), direct wafer-bonding, field-plate, GaN, impactionization, InGaAs, vertical transistor.

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“…The oxidation of III-V compounds, particularly of GaAs, has been studied extensively in the past, however, in efforts to try to produce successful metal-oxide-semiconductor field-effect transistors ͑MOSFETs͒ emphasis was placed on anodic oxidation. More recently, both anodic and thermal oxidation data for AlGaAs and quaternary systems have been reported [1][2][3][4][5][6][7] and the Alcontaining oxides have been found to possess good insulating characteristics. 3,4 The oxidation methodology can also be extended to InP-based devices where, e.g., InAlAs could serve as the oxidation layer.…”

mentioning

confidence: 99%

“…More recently, both anodic and thermal oxidation data for AlGaAs and quaternary systems have been reported [1][2][3][4][5][6][7] and the Alcontaining oxides have been found to possess good insulating characteristics. 3,4 The oxidation methodology can also be extended to InP-based devices where, e.g., InAlAs could serve as the oxidation layer. 8 Thus, Al 2 O 3 -containing layers offer promise as insulators in III-V technology.…”

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confidence: 99%

Thermal Oxidation of III-V Materials and Heterostructures

Hussey

Driad

Sproule

et al. 2002

J. Electrochem. Soc.

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Thermal oxide films formed on n-GaAs͑100͒ and Al x Ga 1Ϫx As (x ϭ 0.25-0.80) from 450-500°C have been characterized by Auger electron spectroscopy and electron microscopy, and the relative oxidation rates of AlGaAs in GaAs-based heterostructures and InAlAs in InP-based heterostructures have been determined. The kinetics and mechanism of oxidation depend on the particular oxidant. Selective oxidation of Al-containing layers in device structures depends on the layer thickness but is independent of the dopant level, and is optimized by oxidation in moist nitrogen ͑95°C͒. Electrical measurements have been performed on oxidized InAlAs/InGaAs heterostructure diodes.III-V materials, unlike silicon, do not form high-quality native oxides and in some ways, this has hampered the development of optoelectronic technology. The oxidation of III-V compounds, particularly of GaAs, has been studied extensively in the past, however, in efforts to try to produce successful metal-oxide-semiconductor field-effect transistors ͑MOSFETs͒ emphasis was placed on anodic oxidation. More recently, both anodic and thermal oxidation data for AlGaAs and quaternary systems have been reported 1-7 and the Alcontaining oxides have been found to possess good insulating characteristics. 3,4 The oxidation methodology can also be extended to InP-based devices where, e.g., InAlAs could serve as the oxidation layer. 8 Thus, Al 2 O 3 -containing layers offer promise as insulators in III-V technology.This paper focuses on the characterization of thermal oxides on GaAs, AlGaAs, and heterostructures for GaAs-and InP-based devices, for example, those used in vertical cavity surface emitting lasers ͑VCSELs͒ or heterojunction bipolar transistors ͑HBTs͒ which are comprised of AlGaAs sandwiched between GaAs layers or InAlAs sandwiched between InGaAs and/or InP layers. The relative oxidation rates of planar surfaces of GaAs and AlGaAs, as well as the relative lateral oxidation rates in GaAs-and InP-based heterostructures have been determined. The objective is to preferentially oxidize AlGaAs or InAlAs to produce an insulating alumina layer in device structures in an attempt to improve device performance. ExperimentalExperiments were performed on n-GaAs͑100͒ doped with 2 ϫ 10 18 cm Ϫ3 Si, ϳ1.5 m thick layers of Al 0.8 Ga 0.2 As and GaAsbased heterostructures (GaAs/Al x Ga 1Ϫx As/GaAs, with x values of 0.25 and 0.75͒ grown by molecular beam epitaxy ͑MBE͒ on n-GaAs͑100͒, and InP-based heterostructures ͑InGaAs/InAlAs/ InGaAs/InP͒. Specimens were thermally oxidized over the temperature range 450-500°C in a variety of environments, pure oxygen and moist air ͑air bubbled through H 2 O at 25 or 95°C͒, and moist nitrogen (N 2 bubbled through H 2 O at 95°C with gas transfer through heated tubes to the oxidation furnace͒.After oxidation samples were analyzed by Auger electron spectroscopy ͑AES, PHI 650 system͒, electron microscopy, and transmission electron microscopy ͑TEM Philips EM 430T͒, operating at 250 keV and scanning electron microscopy ͑SEM, Hitachi S-4700 FESEM͒. Re...

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Oxide based compound semiconductor electronics

Cited by 4 publications

References 6 publications

Modern Analytical Techniques in High Temperature Oxidation and Corrosion

Modern Analytical Techniques in High Temperature Oxidation and Corrosion

Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor

Thermal Oxidation of III-V Materials and Heterostructures

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