Oxide 2D electron gases as a route for high carrier densities on (001) Si

Kornblum, Lior; Jin, Eric N.; Kumah, Divine P.; Ernst, Alexis T.; Broadbridge, C.; Ahn, Charles; Walker, Frederick J.

doi:10.1063/1.4921437

Cited by 18 publications

(14 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Following the deposition of the ½ Sr template layer, an additional monolayer of SrO is grown by depositing Sr at low oxygen pressures and low temperature. This step is followed by the growth of an amorphous STO layer at low temperatures, which is then recrystallized by an ultra‐high vacuum (UHV) anneal . This provides a template layer that allows for the subsequent growth of transition metal oxides over a wide range of oxygen pressures and growth temperatures without the formation of an amorphous SiO 2 interfacial layer.…”

Section: Growth Physical and Electronic Structurementioning

confidence: 99%

“…Copyright 2015, The Authors, published by AIP Publishing LLC.) and f) GTO/STO/Si (Reproduced with permission, Copyright 2015, Amerian Institute of Physics). g) Schematic of coupling between the 2DEG and the semiconductor, where electrons are pushed from the oxide into the semiconductor.…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

“…Kornblum et al studied the growth of GdTiO 3 /STO (GTO/STO) heterostructures on Si (Figure f), as GTO is less prone to over‐oxidation in comparison to LTO. GTO/STO alternating multilayers were successfully integrated on Si using the same oxygen background pressure (5 × 10 −7 Torr) for all the layers during growth . The GTO/STO structures exhibit atomically abrupt oxide/Si interfaces .…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

“…GTO/STO alternating multilayers were successfully integrated on Si using the same oxygen background pressure (5 × 10 −7 Torr) for all the layers during growth . The GTO/STO structures exhibit atomically abrupt oxide/Si interfaces . X‐ray diffraction of the GTO/STO structures grown on Si show comparable structure and quality to an identical structure grown under the same conditions on (LaAlO 3 ) 0.3 (Sr 2 AlTaO 3 ) 0.7 (LSAT) single‐crystal oxide substrates .…”

Section: Materials and Functional Propertiesmentioning

confidence: 99%

See 3 more Smart Citations

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

show abstract

Section: Growth Physical and Electronic Structurementioning

confidence: 99%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

Section: Materials and Functional Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…These oxides can therefore be used as templates for the growth of other functional oxides, providing a route for extending the scope of possibilities for the integration of functional oxide phenomena with semiconductors. For example, ferroelectricity has been demonstrated for BTO and Pb(Zr,Ti)O 3 grown on STO‐templated GaAs; 2D electron gases have been demonstrated using LaTiO 3 and GdTiO 3 grown on STO‐templated Si; magnetic functionality has been demonstrated with epitaxial multiferroic nanocomposites grown on STO‐templated Si; and optical modulators have been demonstrated with FE‐BTO on STO‐Si . Recent improvements in the crystalline quality of oxides grown on Ge using atomic layer deposition further highlight the potential of a scalable integration route of functional oxides for microelectronics technology.…”

Section: Introductionmentioning

confidence: 99%

Transport at the Epitaxial Interface between Germanium and Functional Oxides

Kornblum

Morales-Acosta

Jin

et al. 2015

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

with reversible FE polarization.[ 9 ] Ponath et al. used a combination of impedance microscopy and piezoelectric scanning probe techniques to demonstrate the ferroelectric fi eld effect on charge modulation in the semiconductor, [ 10 ] highlighting the potential of these materials for FE fi eld effect devices.Owing to considerable challenges with the thermodynamic and chemical stability of oxide-semiconductor interfaces, [ 11 ] only a handful of perovskite oxides can be grown directly on semiconductors while maintaining high crystalline quality and an abrupt interface. [ 6,7,[12][13][14] These oxides can therefore be used as templates for the growth of other functional oxides, providing a route for extending the scope of possibilities for the integration of functional oxide phenomena with semiconductors. For example, ferroelectricity has been demonstrated for BTO [ 15 ] and Pb(Zr,Ti)O 3[ 16 ] grown on STO-templated GaAs; 2D electron gases have been demonstrated using LaTiO 3 [ 17 ] and GdTiO 3 [ 18,19 ] grown on STO-templated Si; magnetic functionality has been demonstrated with epitaxial multiferroic nanocomposites grown on STO-templated Si; [ 20 ] and optical modulators have been demonstrated with FE-BTO on STOSi. [ 21 ] Recent improvements in the crystalline quality of oxides grown on Ge using atomic layer deposition [ 22,23 ] further highlight the potential of a scalable integration route of functional oxides for microelectronics technology.Some applications, such as fi eld effect devices, require an insulating semiconductor-oxide interface for device operation. [ 6,13 ] Other oxide functionalities require current transfer with the semiconductor in order to fully realize their potential. Examples for oxide functionalities that can benefi t from interfacing with semiconductors via current transport include photoelectrocatalysis, [ 8 ] resistive switching, [ 24 ] and magnetic, [ 25 ] ferroelectric [ 26,27 ] and multiferroic [ 28 ] tunnel junctions. Interfacing directly with the semiconductor leads to simplifi ed circuits that employ these functionalities, and more importantly, to the development of new electronic and spintronic devices that combine the rich functionalities of oxides with standard devices such as fi eld effect transistors. Here, we develop an approach to control current transfer across an epitaxial oxide interface and focus on the fundamental electronic structure of the interface between BTO and Ge. First, the growth and structure of epitaxial BTO-Ge heterostructures is described, followed by a spectroscopic analysis of the interfacial band offsets and measurements of electronic transport across the interface.Combining functional oxides with conventional semiconductors provides the potential for transformational advancement of microelectronic devices. Harnessing the full spectrum of oxide functionalities requires current transport between the oxide and the semiconductor. This aspect is addressed by controlling the electronic barrier at an interface between a ferroelectric oxide, BaTiO 3 , and ge...

show abstract