Oxidation resistant high conductivity copper films

Ding, Peng; Lanford, W. A.; Hymes, S.; Murarka, S. P.

doi:10.1063/1.111408

Cited by 96 publications

(41 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The differences between the Cu layer and the contact layer make it complicated in the subsequent etching process [14]. In order to improve the reliability and cost of Cu gate electrodes, another method is advocated, namely, the use of Cu alloy (Cu-Mg [15,16], Cu-Ca [17][18][19], Cu-Mn [20][21][22][23], Cu-Ti [24]) instead of pure Cu to form a diffusion barrier and adhesion layer spontaneously [25].…”

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

Abstract:The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 • C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 µΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu 2 O appeared when the annealing temperature reached above 350 • C, which accounts for the increase of the resistivity. Based on Al 2 O 3 and SiO 2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT).

show abstract

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

show abstract

“…The resistivity of the Cu (1.7at.%In) thin film was less than the 4.5 lWcm for immiscible Cu-Cr alloy 9 and similar to that (2.0 lWcm) of the Cu-Mg alloy. 7 The mechanism that is responsible for the reduction in resistivity of the Cu(In) thin film is believed to be the formation of a low-resistivity Cu 4 In and Cu 2 In phase. 14 In this study, x-ray diffraction patterns of Cu (1.5-5at.%In) thin films following annealing at different temperatures for 30 min are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…However, copper oxidizes very easily at a relatively low temperature and cannot form a passivated oxide layer to prevent further oxidation. 7 The Cu-based metallization therefore depends on eliminating the high reactivity of copper. This study develops a passivation method in which dilute indium is added to improve the stability of copper in an oxidizing ambient, while retaining its low resistivity and offering excellent adhesion to the glass substrate over a pure copper thin film.…”

Section: Introductionmentioning

confidence: 99%

Structural and Passivative Behaviors of Cu(In) Thin Film

Fang

Hsieh

2006

Journal of Elec Materi

View full text Add to dashboard Cite

This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5-5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200-600°C for 10-30 min. Thus, self-passivated Cu thin films in the form In 2 O 3 /Cu/SiO 2 were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an In 2 O 3 phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of In 2 O 3 /Cu/SiO 2 improved the resistivity, adhesion to SiO 2 , and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500°C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 lWcm. The results of this study can be potentially exploited in the application of thin-film transistor-liquid crystal display gate electrodes and copper metallization in integrated circuits.

show abstract

“…Nevertheless, copper oxidizes very easily at a relatively low temperature and cannot form a passivated oxide layer, which would prevent further oxidation. 7 Protecting copper from oxidation is therefore critical to its use in AMLCDs and ULSI devices.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films

Hsu

Hsieh

Fang

2008

Journal of Elec Materi

View full text Add to dashboard Cite

Copper thin films with high conductivity and good resistance to electromigration can be used in advanced electronic devices. However, the poor corrosion resistance of copper must be overcome. This work elucidates the possibility of using a self-forming passivation layer to prevent copper oxidation in lightly indiumdoped copper thin films deposited directly on glass substrates and annealed under various oxygen atmospheres. The resistivity of the studied film declined gradually as the film was annealed at an elevated temperature because of the grain growth of the Cu film and the precipitation of indium from the In-doped Cu thin film, as revealed by X-ray diffraction, four-point probe measurements, and transmission electron microscopy. A copper film with high indium content exhibited superior passivation when the film was annealed in an oxygen-rich ambient, but it exhibited high resistivity because of its high indium content. The electrical and passivation properties demonstrated that indium is a promising alloying element for use in copper films for future metallization structures and thin-film transistors.

show abstract

Oxidation resistant high conductivity copper films

Cited by 96 publications

References 6 publications

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Structural and Passivative Behaviors of Cu(In) Thin Film

Enhancement of Oxidation Resistance and Electrical Properties of Indium-Doped Copper Thin Films

Contact Info

Product

Resources

About