Oxidation of silicon

Mott, N. F.; Rigo, S.; Rochet, F.; Stoneham, A. M.

doi:10.1080/13642818908211190

Cited by 149 publications

(79 citation statements)

References 74 publications

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“…Our results support the reactive model, consistent with the silicon-rich reaction layer between silicon and oxide layers suggested by Stoneham et al [4,5,6]. The strongest hyperfine couplings at oxygen nucleus calculated for the reactive model is 4.53 Gauss, which agrees well with the observation, although we have two identical oxygens in the reactive model.…”

Section: Discussionsupporting

confidence: 95%

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Environment of the P b center at the Si(111)/oxide interface

Ong

Harker

Stoneham³

1993

Interface Sci

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Abstract. We assess several models for the environment of the Pb center (Si dangling bond center) at the interface of Si(lll) with its oxide. The comparison of hyperfine constants observed with those predicted using large cluster models favors a local structure in which there is an Si-Si bond within the oxide close to the Si dangling bond. Such Si-Si bonds are also suggested by a number of other experiments and are consistent with the "reactive layer" model proposed to rationalize a range of oxidation studies.

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Section: Discussionsupporting

confidence: 95%

“…The comparison of the predictions with experiment supports the third model. The third model, which has excess Si, is termed a reactive model, related to an idea originally proposed by Stoneham et al [4,5,6] to explain the mechanism of oxidation of silicon.…”

Section: Introductionmentioning

confidence: 99%

Environment of the P b center at the Si(111)/oxide interface

Ong

Harker

Stoneham³

1993

Interface Sci

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“…The activation energies taken from the straight lines in the plots are summarized in Table I. It can be seen that the activation energies are of the same order of magnitude as those found earlier for dry oxidation in the same temperature range [1,8]. The observed trend is smaller activation energies for the Si substrates cleaned in plasma without heating.…”

Section: Resultssupporting

confidence: 63%

“…That is why the oxidation process in thin film regime has received much attention, but it still remains unexplained with respect to the oxidation mechanism, especially at low temperatures (<900 o C). Of particular relevance are a number of studies on the initial oxidation regime, which have implicated the interface reaction as the dominating process for SiO 2 films thinner than 10 nm [1,2]. The pre-oxidation conditions of the Si surface play a decisive role and, hence, will influence the growth kinetics of thin SiO 2 layers and their dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO₂growth

Szekeres

Alexandrova

Lytvyn

et al. 2005

J. Phys.: Conf. Ser.

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“…The technical issues are threefold: the creation of realizations of an amorphous silica; the calculation of key energies involving defects; and the analysis of percolative diffusion. Mott (see Mott et al 1989) suggested that the sites which determine solubility of interstitial species may be relatively rare, whereas percolative diffusion may have to sample sites which are energetically less favourable. A percolation approach requires analysis of the topology of the realizations and the character of the important percolation paths.…”

Section: Predicting Diffusion Rates In Amorphous Oxidesmentioning

confidence: 99%

The oxide gate dielectric: do we know all we should?

Stoneham¹,

Gavartin²,

Shluger³

2005

J. Phys.: Condens. Matter

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Silicon's importance as a semiconductor owes much to its oxide. This oxide passivates, enables key process steps, and has been the gate dielectric of choice for MOSFETs for many years. Experience and know-how in using this oxide makes it hard for radical alternatives to be accepted. Yet it may not be possible for silicon dioxide to meet the stringent demands of the Semiconductor Industry Roadmap as a gate dielectric. This leads to clear technological questions. Is the oxide the best that can be grown? Could a better oxide be obtained by some modification of the growth process? What are the performance criteria that define the 'best' oxide? Are evolutionary changes, like incorporating nitrogen, to be preferred to introducing new oxides,such as those of Hf or Zr? Would there be long term problems with the new oxides? As so often in microelectronics, the technology demands new materials and new ideas from condensed matter physics. The critical role of the gate dielectric points to challenges for basic condensed matter theory, and this paper attempts to define these issues. It is certainly not sufficient to predict an equilibrium structure for oxide on silicon. The front and back regions of the oxide differ in measurable ways. Dynamical events like breakdown behaviour are certainly partly controlled by defects. Many experiments show the standard view of growth processes, 'bulk' diffusion and some interface reaction, is incomplete at best. How defects evolve as the oxide grows, and how impurities like H affect what happens could be crucial. Any analysis, even if only to create a framework of understanding, should address the various experiments exploiting different oxygen isotopes,the systematics of oxidation kinetics, and those electron microscope observations that show apparent layer-by-layer growth on terraces. The present paper aims to define an appropriate context for other detailed studies in the hope that progress in theory can contribute effectively to microelectronics futures.

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Oxidation of silicon

Cited by 149 publications

References 74 publications

Environment of the P b center at the Si(111)/oxide interface

Environment of the P b center at the Si(111)/oxide interface

Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO₂growth

The oxide gate dielectric: do we know all we should?

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Oxidation of silicon

Cited by 149 publications

References 74 publications

Environment of the P b center at the Si(111)/oxide interface

Environment of the P b center at the Si(111)/oxide interface

Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO2growth

The oxide gate dielectric: do we know all we should?

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Product

Resources

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Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO₂growth