Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO<sub>2</sub>growth

Szekeres, A.; Alexandrova, S.; Lytvyn, P. M.; Kompitsäs, M.

doi:10.1088/1742-6596/10/1/061

Cited by 1 publication

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References 14 publications

(14 reference statements)

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“…Three p-type (100) monocrystalline Si wafers were cleaned by standard RCA procedure (clean in H 2 SO 4 /H 2 O 2 solution followed by a dip in diluted HF and rinse in deionized H 2 O) [10]. Subsequently, one wafer was wet oxidized at 1000 °C to form the 1.0 μm thick SiO 2 layer and on the second wafer was deposited 450nm of aluminum nitride (AlN) by RF magnetron sputtering of an Al target in N 2 /Ar gas mixture.…”

Section: Samples Preparationmentioning

confidence: 99%

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Fraga

Furlan²,

Rasia

et al. 2012

ECS Trans.

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Silicon carbide (SiC), in bulk or film form, has been shown as a promising material to replace the silicon as sensing element in devices for harsh environments. This has motivated several studies on growth and characterization of SiC thin films on different substrates such as silicon, silicon dioxide (SiO2), aluminum nitride (AlN) and silicon nitride (Si3N4), among others. However, less attention has been given to the investigation on how substrates affect the piezoresistive properties of SiC thin films. In this work, we have investigated the effect of substrates on the piezoresistive properties of SiC thin films produced by magnetron sputtering. Three types of substrates were utilized: (100) monocrystalline silicon, AlN on silicon and thermally oxidized silicon. Test structures were fabricated using photolithography, metallization lift-off and RIE (reactive ion etching) processes in order to perform piezoresistive characterization of the SiC samples produced.

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Section: Samples Preparationmentioning

confidence: 99%

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Fraga

Furlan²,

Rasia

et al. 2012

ECS Trans.

View full text Add to dashboard Cite

show abstract

Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO₂growth

Cited by 1 publication

References 14 publications

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

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Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO2growth

Cited by 1 publication

References 14 publications

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

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Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO₂growth