Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Fraga, Mariana Amorim; Furlan, Humber; Rasia, Luiz Antônio; Koberstein, Leandro L.

doi:10.1149/1.3694474

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…5. The obtained ΔR=R ratio is found to be approximately 96% at 580 K. The absolute TCR value is larger than 4000 ppm=K for temperatures from 300 to 580 K. The TCR value is found to be significantly higher than that of a-SiC materials fabricated by a sputtering process, as reported by Fraga et al 28) (∼40 ppm=K); therefore, it shows an enhanced technological potential for thermal sensing applications. The high TCR of the a-SiC film grown by LPCVD is attributed to the fact that the LPCVD process typically produces high-quality a-SiC films with better purity, uniformity, and lattice homogeneity and fewer defects than a-SiC films fabricated by sputtering processes.…”

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confidence: 58%

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Dinh

Dao

Phan

et al. 2015

Appl. Phys. Express

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We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from %4,000 to %16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

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supporting

confidence: 58%

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Dinh

Dao

Phan

et al. 2015

Appl. Phys. Express

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An Approach on the Use of Co-sputtered W-DLC Thin Films as Piezoresistive Sensing Materials

Leal

Furlan

Massi

et al. 2022

CMS

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Background: Miniaturized piezoresistive sensors, particularly strain gauges, pressure sensors, and accelerometers, have been used for measurements and control applications in various fields, such as automotive, aerospace, industrial, biomedical, sports, and many more. A variety of different materials have been investigated for the development of these sensors. Among them, diamond-like carbon (DLC) thin films have emerged as one of the most promising piezoresistive sensing materials due to their excellent mechanical properties, such as high hardness and high Young’s modulus. At the same time, metal doping has been studied to enhance its electrical properties. Objective: This article explores the use of co-sputtered tungsten-doped diamond-like carbon (W-DLC) thin films as microfabricated strain gauges or piezoresistors. Methods: Different serpentine thin-film resistors were microfabricated on co-sputtered W-DLC thin films using photolithography, metallization, lift-off, and RIE (reactive ion etching) processes. In order to evaluate their piezoresistive sensing performance, gauge factor (GF) measurements were carried out at room temperature using the cantilever beam method. Results: GF values obtained in this study for co-sputtered W-DLC thin films are comparable to those reported for W-DLC films produced and characterized by other techniques, which indicates the feasibility of our approach to use them as sensing materials in piezoresistive sensors. Conclusion: W-DLC thin films produced by the co-magnetron sputtering technique can be considered as sensing materials for miniaturized piezoresistive sensors due to the following key advantages: (i) easy and well-controlled synthesis method, (ii) good piezoresistive properties exhibiting a GF higher than metals, and (iii) thin-film resistors formed by a simple microfabrication process.

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Development and Applications of Aluminum Nitride Thin Film Technology

Cunha¹,

Pimenta²,

Fraga³

2023

Thin Films - Deposition Methods and Applications

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Aluminum nitride (AlN) thin films have aroused the interest of researchers due to their unique physicochemical properties. However, further studies on these semiconductor materials are still necessary to establish the manufacturing of high-performance devices for applications in various areas, such as telecommunications, microelectronics, and biomedicine. This chapter introduces AlN thin film technology that has made a wide range of applications possible. First, the main physicochemical properties of AlN, its wurtzite crystalline structure, and the incorporation of oxygen during the thin film deposition process are presented. Furthermore, the growth of AlN films by different techniques and their applications as a buffer layer and sensing layer are summarized. Special attention was given to the sputtering deposition process and the use of sputtered AlN films in SAW sensors.

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Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

Cited by 3 publications

References 10 publications

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

An Approach on the Use of Co-sputtered W-DLC Thin Films as Piezoresistive Sensing Materials

Development and Applications of Aluminum Nitride Thin Film Technology

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