Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O

Klyachko, Dimitri; Rowntree, P.; Sanche, Léon

doi:10.1016/0039-6028(95)95066-4

Cited by 37 publications

(21 citation statements)

References 27 publications

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“…The O1s line for sorbed H 2 O monomer on the Si-H surface is centered at 533 eV, consistent with those observed previously for physisorbed water layers [29]. The O1s line shifts slightly to lower binding energy upon exposure and a distinct shoulder develops at 531 eV [30]. Many researches have suggested O1s peak (529.6 eV) shifts for 0.1 eV as a result of electrostatic interactions [31].…”

Section: Discussionsupporting

confidence: 88%

Adsorptive Removal of Carbamazepine and Diatrizoate in Iron Oxide Nanoparticles Amended Sand Column Mimicing Managed Aquifer Recharge

Yoon

Mahanty

Kim

2017

Water

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Abstract:The sorption-desorption of recalcitrant pharmaceuticals in sand/soil columns can be used to infer performance of managed aquifer recharge. Removal of carbamazepine (CBZ) and diatrizoate (DTZ) from synthetic wastewater, containing 100 µg·L −1 of each pharmaceuticals, was studied in recirculating sand columns amended with uncoated or methacrylic acid (MAA) coated magnetite nanoparticles. Removal of CBZ and DTZ in MAA-magnetite column (68.34% and 61.91%, respectively) was much higher than that with uncoated magnetite (53.47% and 50.26%, respectively). Rapid decrease of dissolved organic carbon concentrations across nanoparticle amended columns (between 42.28% and 50.08% on Day 1), followed by slow recuperation suggests adsorption-desorption dynamics and competition of dissolved organic matter for sorption sites. Core-level binding energy and charge analysis for Fe(2s) and O(1s) in X-ray photoelectron spectroscopy suggests involvement of physisorption process on the NP surfaces.

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Section: Discussionsupporting

confidence: 88%

Adsorptive Removal of Carbamazepine and Diatrizoate in Iron Oxide Nanoparticles Amended Sand Column Mimicing Managed Aquifer Recharge

Yoon

Mahanty

Kim

2017

Water

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“…Also plotted is the total DEA cross-section for CF 4 deposited onto multilayer Kr, as inferred from the charge trapping measurements of [39] Table 4 Cross-sections (cm 2 ) for radiation-induced processes in halo-uracils as reported in [58]. Electron cross-sections were obtained with incident electron energies in the approximate range 0-5 eV [55] and [56]. Solid line is drawn to guide the eye havior are not yet known but may derive from inhibited dissociation within close-packed halo-uracil films, solvation of halogen anions within ice, and/or an increased number of low-energy (solvated) electrons within ice.…”

Section: Si 3 -Si -H + Oh → Si 3 -Si -Oh + Hmentioning

confidence: 99%

“…XPS has been used to analyze modifications induced by 0 -20 eV electrons incident on a hydrogen passivated and sputtered Si (111) surface, onto which thin films of H 2 O [55,56] and CF 4 [57] had been physisorbed. In both cases, following the electron-induced dissociation of the molecular adsorbate, a new XPS signal associated with the chemisorption of either H 2 O or F onto the Si surface was observed.…”

Section: Xps Studiesmentioning

confidence: 99%

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Absolute and effective cross-sections for low-energy electron-scattering processes within condensed matter

Bass

Sanche

1998

Radiation and Environmental Biophysics

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Within the last two decades, a number of experimental techniques have been developed to measure mean free paths and absolute and effective cross-sections for various processes related to the interaction of low-energy electrons with condensed matter. In all of the experiments, a monochromatic electron beam impinges on a thin multilayer film composed of atoms and/or molecules condensed on a metal or semiconductor substrate held at cryogenic temperatures in an ultra-high-vacuum system. Depending on the apparatus, cross-sections are obtained from low-energy electron transmission (LEET), high-resolution electron energy loss (HREEL), x-ray photoelectron (XPS) spectroscopy, electron-stimulated desorption (ESD) of neutral and ions, or a combination of these techniques. Quasi-elastic and inelastic mean free paths have been extracted from LEET data. This method has also served to generate absolute cross-sections for electron trapping and fragment production from the dissociation of transient molecular anions. In amorphous ice, a complete set of absolute cross-sections for all inelastic losses by 1-20 eV electrons has been obtained from HREEL data. Effective cross-sections for neutral and ionic radical formation were generated by desorption and XPS experiments. These various methods are briefly described in this article, and the corresponding cross-sections in the range 0-20 eV summarized.

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“…Possible direct optical processes include destabilization and dissociation of Si-H bonds 9 and excitation of adsorbed OH groups. 10 In order to estimate the effect of thermal desorption, the laser-induced maximum temperature rise has been calculated assuming a Gaussian beam profile and cooling by threedimensional conduction into the substrate. 11 The resulting temperature rise ranges from less than 1 K to almost 400 K for power densities between 2 and 200 kW/cm 2 , respectively.…”

Section: Laser Direct Writing Of Oxide Structures On Hydrogen-passivamentioning

confidence: 99%

Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

Müllenborn

Birkelund

Grey

et al. 1996

Applied Physics Letters

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A focused laser beam has been used to induce oxidation of hydrogen-passivated silicon. The scanning laser beam removes the hydrogen passivation locally from the silicon surface, which immediately oxidizes in air. The process has been studied as a function of power density and excitation wavelength on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer-scale patterns can be generated by laser direct oxidation and complemented with nanometer resolution by scanning probe techniques. The combined micro- and nanoscale pattern can be transferred to the silicon in a single etching step by either wet or dry etching techniques.

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Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O

Cited by 37 publications

References 27 publications

Adsorptive Removal of Carbamazepine and Diatrizoate in Iron Oxide Nanoparticles Amended Sand Column Mimicing Managed Aquifer Recharge

Adsorptive Removal of Carbamazepine and Diatrizoate in Iron Oxide Nanoparticles Amended Sand Column Mimicing Managed Aquifer Recharge

Absolute and effective cross-sections for low-energy electron-scattering processes within condensed matter

Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

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