“…While commercial production of CIGS modules has recently commenced, attaining reproducible, homogeneous and appropriately tailored CIGS films over large areas continues to pose a daunting hurdle for the development of pervasive cost-competitive PV technology. [12,21] In an effort to significantly reduce fabrication costs relative to vacuum-based approaches (e.g., no vacuum requirements, less energy intensive deposition, better materials utilization efficiency), as well as known solution-based approaches (e.g., fewer processing steps, no high-temperature selenization treatment, more facile Ga incorporation), we are pursuing a simple molecular-based approach for solution-depositing CIGS layers. The targeted hydrazine-based deposition process relies on forming a soluble molecular-based precursor comprising metal chalcogenide anions separated by hydrazinium (i.e., N 2 H 5 þ ) cations, analogous to that described previously for the deposition of ultrathin (nanometer-scaled) films of chalcogenides for transistor applications, [22][23][24] but with the added requirement of orders of magnitude thicker (micrometer-scaled) films and more complex stoichiometry control.…”