Metrology, Inspection, and Process Control for Microlithography XXXII 2018
DOI: 10.1117/12.2297535
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Overlay and stitching metrology for massively parallel electron-beam lithography (Conference Presentation)

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“…For example, an excellent paper by W. Flack 6 , published in 1993 details the modeling of stitching errors between adjacent exposures of full field, analogous to the fractional fields in 10(b) albeit with much larger geometries. A variety of more recent papers discuss stitching control in various applications 5,7,8 . The same approaches used for full field stitching are equally applicable to the High-NA case.…”
Section: Overlay Control In High-na Exposuresmentioning
confidence: 99%
“…For example, an excellent paper by W. Flack 6 , published in 1993 details the modeling of stitching errors between adjacent exposures of full field, analogous to the fractional fields in 10(b) albeit with much larger geometries. A variety of more recent papers discuss stitching control in various applications 5,7,8 . The same approaches used for full field stitching are equally applicable to the High-NA case.…”
Section: Overlay Control In High-na Exposuresmentioning
confidence: 99%