Overlay and stitching metrology for massively parallel electron-beam lithography (Conference Presentation)

Rademaker, Guido; Pradelles, Jonathan; Landis, S.; Rey, S.; Golotsvan, Anna; Marchelli, Anat; Itzkovich, Tal; Shapoval, T.; Haupt, Ronny; Slot, E.; Boer, G. de; Dave, Dhara; Wieland, Marco; Pain, Laurent

doi:10.1117/12.2297535

Cited by 1 publication

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, an excellent paper by W. Flack 6 , published in 1993 details the modeling of stitching errors between adjacent exposures of full field, analogous to the fractional fields in 10(b) albeit with much larger geometries. A variety of more recent papers discuss stitching control in various applications 5,7,8 . The same approaches used for full field stitching are equally applicable to the High-NA case.…”

Section: Overlay Control In High-na Exposuresmentioning

confidence: 99%

Overlay challenges in the era of high-NA

Weiss

2023

Metrology, Inspection, and Process Control XXXVII

View full text Add to dashboard Cite

High-NA EUV lithography represents the next chapter in advancing Moore’s Law. The relentless march toward progressively tighter geometries drives a reliance on pitch-division and multi-patterning techniques such as SADP, SAQP, SALELE, and others to overcome lithographic resolution limitations. Unfortunately, these approaches come with a cost in the form of extra lithography steps and increased process complexity. In technology nodes that are heavily dependent on pitch-division and multi-patterning, overlay control becomes extremely challenging, as tighter budgets are required to compensate for the additional sources of edge placement error and control of a current layer reticle to multiple underlayers is required. In recent years, the improved resolution of Low-NA EUV has helped to replace 193 nm immersion-based pitch division schemes with direct print, greatly reducing process complexity and thus providing a degree of respite for overlay control. However, as patterning requirements continue to tighten in accordance with Moore’s Law, even the Low-NA EUV becomes insufficient for direct patterning of the required geometries, forcing a return to pitch division. Intel intends to avoid Low-NA EUV + pitch division and move aggressively to High-NA EUV lithography for production in 2025. Unlike previous generation lithography platforms, High-NA EUV does create some additional challenges for overlay control and this talk will be focused on addressing those items.

show abstract

Section: Overlay Control In High-na Exposuresmentioning

confidence: 99%

Overlay challenges in the era of high-NA

Weiss

2023

Metrology, Inspection, and Process Control XXXVII

View full text Add to dashboard Cite

show abstract

Overlay and stitching metrology for massively parallel electron-beam lithography (Conference Presentation)

Cited by 1 publication

References 2 publications

Overlay challenges in the era of high-NA

Overlay challenges in the era of high-NA

Contact Info

Product

Resources

About