Metrology, Inspection, and Process Control XXXVII 2023
DOI: 10.1117/12.2664960
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Overlay challenges in the era of high-NA

Abstract: High-NA EUV lithography represents the next chapter in advancing Moore’s Law. The relentless march toward progressively tighter geometries drives a reliance on pitch-division and multi-patterning techniques such as SADP, SAQP, SALELE, and others to overcome lithographic resolution limitations. Unfortunately, these approaches come with a cost in the form of extra lithography steps and increased process complexity. In technology nodes that are heavily dependent on pitch-division and multi-patterning, overlay con… Show more

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“…We can also determine stitch CD sensitivity to overlap Y errors from this graph. The overlay variation along slit X direction between High NA fields at stitching can be expected [10]. Overlap errors at stitch are related to this overlay variation.…”
Section: Aerial Image Interaction and Opc Strategiesmentioning
confidence: 86%
“…We can also determine stitch CD sensitivity to overlap Y errors from this graph. The overlay variation along slit X direction between High NA fields at stitching can be expected [10]. Overlap errors at stitch are related to this overlay variation.…”
Section: Aerial Image Interaction and Opc Strategiesmentioning
confidence: 86%