Nanostructured organic
templates originating from self-assembled
block copolymers (BCPs) can be converted into inorganic nanostructures
by sequential infiltration synthesis (SIS). This capability is particularly
relevant within the framework of advanced lithographic applications
because of the exploitation of the BCP-based nanostructures as hard
masks. In this work, Al
2
O
3
dot and antidot arrays
were synthesized by sequential infiltration of trimethylaluminum and
water precursors into perpendicularly oriented cylinder-forming poly(styrene-
block
-methyl methacrylate) (PS-
b
-PMMA)
BCP thin films. The mechanism governing the effective incorporation
of Al
2
O
3
into the PMMA component of the BCP
thin films was investigated evaluating the evolution of the lateral
and vertical dimensions of Al
2
O
3
dot and antidot
arrays as a function of the SIS cycle number. The not-reactive PS
component and the PS/PMMA interface in self-assembled PS-
b
-PMMA thin films result in additional paths for diffusion and supplementary
surfaces for sorption of precursor molecules, respectively. Thus,
the mass uptake of Al
2
O
3
into the PMMA block
of self-assembled PS-
b
-PMMA thin films is higher
than that in pure PMMA thin films.
This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.
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