Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturization

Kegel, Jan; Angermann, H.; Stürzebecher, Uta; Conrad, E.; Mews, Mathias; Korte, Lars; Stegemann, Bert

doi:10.1016/j.apsusc.2014.01.183

Cited by 49 publications

(32 citation statements)

References 15 publications

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“…For thinner (i)a-Si:H layer we observed a lower passivation effect and thus lower carrier lifetimes and eventually lower implied efficiencies due to higher defect density in the layer [20]. A detailed discussion of the influence of the layer thickness on the implied V oc 's, the implied fill factors and the implied efficiencies is presented in [18]. After optimizing pyramid morphology and layer deposition, metallic contacts were prepared and the characteristics of the solar cell were determined.…”

Section: Solar Cell Processingmentioning

confidence: 93%

“…It is emphasized at this point, that the wafers are completely processed in IPA-free solution. Apparently, the IPA-free processed solar cells do not suffer from any additional losses and perform as well as their counterparts fabricated conventionally in IPA-containing etching solution [18]. The dashed line in Fig.…”

Section: Solar Cell Processingmentioning

confidence: 97%

“…This drop in the lifetime leads to a shift of the maximum power point (MPP) towards lower voltage (from 661 mV to 634 mV) and lower injection level and, thus, causes a reduction of the fill factor. In addition, the open circuit voltages are lowered upon TCO deposition, resulting in an overall reduction of the implied efficiency at the MPP [18].…”

Section: Solar Cell Processingmentioning

confidence: 98%

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Evolution of the Charge Carrier Lifetime Characteristics in Crystalline Silicon Wafers During Processing of Heterojunction Solar Cells

et al. 2014

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Section: Solar Cell Processingmentioning

confidence: 93%

Section: Solar Cell Processingmentioning

confidence: 97%

Section: Solar Cell Processingmentioning

confidence: 98%

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Evolution of the Charge Carrier Lifetime Characteristics in Crystalline Silicon Wafers During Processing of Heterojunction Solar Cells

et al. 2014

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“…PO4 -3 or its compounds help for forming big pyramids [16]. Moreover, the Na3PO4 plays the role of a surface active agent which can decrease the active energy of the texturing reaction and makes texturization of silicon surface more effective [17][18][19]. In this paper, texturization of monocrystalline silicon wafers with a mixture of potassium phosphate tribasic (K3PO4) and potassium silicate (K2SiO3) solutions was studied.…”

Section: Introductionmentioning

confidence: 99%

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Luo¹,

Man²,

Zheng³

et al. 2016

Proceedings of the 2015 International Conference on Materials Chemistry and Environmental Protection (Meep-15)

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Abstract-The pyramid construction was formed with different K3PO4 concentrations under different time and temperatures. The pyramid size, density and uniformity on monocrystalline silicon surface have been studied. We found that the K3PO4 concentrations and temperature has a crucial influence on pyramid density; the time has a significant influence on pyramid size. With the time increasing (from 5min to 30min), the size varies from 1.2 to 3.7μm. The density varies from 0% to 52.2%, with the temperature increasing (from 30℃ to 90℃). The pyramid size and density obtained in the optimal K3PO4 concentrations (30wt% K3PO4, 2wt K2SiO3, 85℃, and 5 min) are close to 1.3μm and 48.0%. The uniform pyramids are obtained in the optimal temperature (30wt% K3PO4, 2wt% K2SiO3, 90℃, and 5 min), its biggest size of pyramid is 3.1 μm and mean size is 1.1μm. Furthermore, the average reflectivity of silicon surface has also been studied. For the textured silicon surface, the average reflectivity obtained in the optimal etching conditions (6wt% K3PO4+ 2wt% K2SiO3, 85℃, and 20 min) is close to 11.6%. This technique provides an alternative way for production high-efficiency silicon solar cells.

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“…Ани-зотропное жидкостное травление и травление в плазме позволяют обрабатывать большие поверхности кремния и получать неупорядоченную пирамидальную текстуру с размерами от 1 до 3−4 мкм [3][4][5][6]. Фотолитографи-ческие методы позволяют получать упорядоченные и неупорядоченные структуры с очень большим разбросом размеров, но они дороги и не обеспечивают высокой производительности.…”

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Текстура Поверхности Монокристаллического Кремния, Окисленного Под Тонким Слоем v-=sub=-2-=/Sub=-O-=sub=-5-=/Sub=-

Nikitin¹,

Нащекин²,

Terukova³

et al. 2017

Физика И Техника Полупроводников

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Исследован процесс текстурирования поверхности монокристаллического кремния, окисленного под слоем V2O5. Интенсивное окисление кремния на границе Si-V2O5 начинается при температуре 903 K, что на 200 K ниже, чем при термическом окислении кремния в атмосфере кислорода. На границе V2O5-Si образуется слой диоксида кремния толщиной от 30-50 нм с включениями SiO2 в кремний глубиной до 400 нм. Найдено значение коэффициента диффузии атомарного кислорода при 903 K через слой диоксида кремния (D≥2·10-15 см2·с-1). Предложена модель низкотемпературного окисления кремния, основанная на диффузии атомарного кислорода из V2O5 через слой SiO2 к кремнию и возникновении преципитатов SiOx в кремнии. После удаления слоев V2O5 и диоксида кремния на поверхности кремния образуется текстура, интенсивно рассеивающая свет в области длин волн 300-550 нм, что важно для текстурирования фронтальной и тыльной поверхностей солнечных фотопреобразователей. DOI: 10.21883/FTP.2017.01.8292

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Over 20% conversion efficiency on silicon heterojunction solar cells by IPA-free substrate texturization

Cited by 49 publications

References 15 publications

Evolution of the Charge Carrier Lifetime Characteristics in Crystalline Silicon Wafers During Processing of Heterojunction Solar Cells

Evolution of the Charge Carrier Lifetime Characteristics in Crystalline Silicon Wafers During Processing of Heterojunction Solar Cells

Texturization of Monocrystalline Silicon Wafers with K3PO4 /K2sio3 Solutions under Different Conditions

Текстура Поверхности Монокристаллического Кремния, Окисленного Под Тонким Слоем v-=sub=-2-=/Sub=-O-=sub=-5-=/Sub=-

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