Out-of-plane high-Q inductors on low-resistance silicon

Chua, C.L.; Fork, D. K.; Schuylenbergh, Koenraad Van; Lu, Jiawei

doi:10.1109/jmems.2003.820274

Cited by 77 publications

(46 citation statements)

References 10 publications

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“…[229] Another example is illustrated in Figure 14, where an array of high Q-factor on-chip inductors was micro-fabricated on a Si CMOS wafer to form low-phase-noise oscillator circuits. [230] The coils were fabricated with a micro-machining technology to form 3D out-of-plane structures with improved Q-factors. Similar approaches to integrating low-loss passives with UWBG semiconductors could significantly advance power converter capabilities.…”

Section: Passive Elementsmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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Section: Passive Elementsmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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“…The fabrication of suspended metallic micro-structures usually includes the etching of a sacrificial material [1,2]. Here, we present a simple process taking advantage of surface tensions to produce suspended metallic microstructures by directly dipping the sample into a melted alloy.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of suspended metallic structures: application to a one-shot micro-valve

Debray

Ueda

Shibata

et al. 2007

IEICE Electron. Express

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Abstract:We developed a method which allows us to fabricate suspended metallic structures without the need for a sacrificial layer. It consists in the selective dip-coating of a low melting point alloy on etched silicon patterns. The technique was applied to the fabrication of a passive one-shot micro-valve sensitive to the ambient temperature and the input pressure. The working principle of the valve was validated. The primary advantage of the system is its low opening pressure difference (a few to tens of kilopascal).

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“…24,25 Unlike the 3D inductor developed by Palo Alto Research Center, 23 which uses a sputtered MoCr metal layer to achieve high stress in the metal and to create the inductor loops, our fabrication technology is based on depositing a combination of Cr and Au thin metal layers, which are compatible with integrated circuit fabrication. Additionally, we have optimized the process for geometries ͑metal width, thickness, and winding diameter͒ to obtain inductors with optimum performance in a 1 -15 GHz frequency range.…”

Section: Fabricationmentioning

confidence: 99%

“…23 These technologies have resulted in an excellent performance for 3D inductors with maximum quality factors of 30-70 and self-resonant frequencies of 2 -15 GHz. These technologies, however, either are not fully compatible with Si microfabrication technology or require nonconventional processing steps that make the integration of these inductors in microelectronic circuits very challenging.…”

Section: Introductionmentioning

confidence: 99%

“…These technologies, however, either are not fully compatible with Si microfabrication technology or require nonconventional processing steps that make the integration of these inductors in microelectronic circuits very challenging. The selfassembled out-of-plane MoCr inductors reported in the literature 23 have been adopted for IC fabrication at frequencies smaller than 2 GHz.…”

Section: Introductionmentioning

confidence: 99%

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High-Q micromachined three-dimensional integrated inductors for high-frequency applications

Weon

Jeon

Mohammadi

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Three-dimensional micromachined inductors are fabricated on high-resistivity ͑10 k⍀ cm͒ and low-resistivity ͑10 ⍀ cm͒ Si substrates using a stressed metal technology. On high-resistivity Si substrate with low-k dielectric material ͑SU-8™͒, this technology achieves a quality factor Q of 75 for a 1 nH inductor at frequencies around 4 GHz and a self-resonant frequency f sr above 20 GHz. Using Si bulk micromachining to etch away the low-resistivity Si substrate with a combination of deep reactive ion etching and tetramethyl ammonium hydroxide etching methods, a 1.2 nH inductor achieves a peak quality factor Q of 140 at a frequency of 12 GHz with a self-resonant frequency f sr above 40 GHz. The dependence of high-frequency performance on the inductor's variables, such as the number of turns, turn-to-turn gap, and substrate type, has been investigated. Excellent performance is achieved by removing the substrate due to the complete elimination of substrate losses and the reduction of the parasitic capacitance. This technology is simple and provides high performance integrated inductors on Si or compound-semiconductor platforms.

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Out-of-plane high-Q inductors on low-resistance silicon

Cited by 77 publications

References 10 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Fabrication of suspended metallic structures: application to a one-shot micro-valve

High-Q micromachined three-dimensional integrated inductors for high-frequency applications

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