Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (−22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7−δ/BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.
Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23 °C using a wet-chemical hydrogen-termination procedure. Epitaxial YBa2Cu3O7−δ films have been grown on these films.
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