Articles you may be interested inFocused-ion-beam overlay-patterning of three-dimensional diamond structures for advanced single-photon properties J. Appl. Phys. 116, 044308 (2014); 10.1063/1.4891022Focused-ion-beam induced damage in thin films of complex oxide BiFeO3Evaluations of the hopping growth characteristics on three-dimensional nanostructure fabrication using focused ion beamIn this article, the authors present a fabrication/assembly method that grants the ability to create complex three-dimensional ͑3D͒ nanostructures. This method uses a combination of micro-and nanomachining capabilities with a focused ion beam ͑FIB͒ and six degrees of freedom ͑DOFs͒ 3D nanomanipulator. A dual beam of scanning electron microscope and a FIB system was used to ion beam mill a silicon piece in order to create tethered structures. Various 3D structures were further processed by the ion beam milling process and platinum chemical vapor deposition unit to form sub-100-nm features. The gas assisted deposition system was used to create a convex shape on the nanoairplane using the gray scale image digital patterning system. The six DOFs nanomanipulator was used to pick, rotate, and place the nanoflags onto the FIB defined Texas and United States maps made by the FIB. In addition, a multiwalled carbon nanotube was used as a flag pole, and then it was attached to a scanning probe microscope tip. The tip was then actuated to tapping mode to demonstrate the nanoflag waving. The assembly technique was also utilized to manipulate individual 100 nm polystyrene microspheres.

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We have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then "folded out" from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.

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