Ostwald ripening during ion beam synthesis — a computer simulation for inhomogeneous systems

Reiss, S.; Heinig, Karl-Heinz

doi:10.1016/0168-583x(94)95760-6

Cited by 46 publications

(11 citation statements)

References 13 publications

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“…2͑b͒, the most superficial layer of precipitates has a bimodal size distribution. This observation is in perfect agreement with the images given by computer simulations 19,20 and can be explained as a direct consequence of the self-organization propagation.…”

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confidence: 89%

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Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2

Bonafos

Garrido

López

et al. 1998

Applied Physics Letters

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In this letter, we report the ion-beam synthesis and the structural characterization of ZnS nanocrystals in SiO2. Both electron diffraction and x-ray diffraction measurements show the precipitation of ZnS nanocrystals having a wurtzite–2H structure and infrared spectroscopy confirms the presence of Zn–S bonding. Upon annealing, transmission electron microscopy observations show the Ostwald ripening of the precipitates coupled with a self-organization in two layers parallel to the free surface. This self-organization has been also detected by secondary ion mass spectroscopy, and its origin is discussed in terms of a pure Ostwald ripening process and/or a consequence of the implantation damage.

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confidence: 89%

“…Reiss and Heinig. 19,20 have shown, by using computer simulations, this spatial self-structuring to be the consequence of pure Ostwald ripening under appropriate initial conditions, i.e., initiated by a concentration gradient from the precipitate layer to a large inhomogeneity ͑e.g., the surface͒. Moreover, as we see on the TEM image shown in Fig.…”

mentioning

confidence: 99%

Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2

Bonafos

Garrido

López

et al. 1998

Applied Physics Letters

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“…1,4,7 For SiO 2 layers studied by RBS after annealing in N 2 , a redistribution of as-implanted Ge depth profiles into three well-separated peaks has been found recently. 1 A redistribution due to self-organization of Ge nanoclusters, 8,9 which can result in such a multi-layer depth profile, could be excluded due to different length scales of the diffusional screening length 10 of the Ge nanocluster system and the distance between the three Ge peaks. It has been argued that chemical reactions of the implanted Ge with a very low concentration of impurities (moisture) in the annealing ambient could be the driving force for the decay of the Gaussian-like Ge depth profile into sublayers.…”

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confidence: 98%

XPS investigation with factor analysis for the study of Ge clustering in SiO2

Oswald

Schmidt

Heinig

2000

Surf. Interface Anal.

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“…While in the 8 Â 10 15 Pt + /cm 2 implanted bilayer we observe aggregate of small and large clusters, in the case of 1.2 Â 10 16 Pt + /cm 2 implanted bilayer large uniform size clusters are alone observed. This might be due to Ostwald ripening process [19,20]. The ripening process involves atomic diffusion between clusters where larger clusters grow at the expense of smaller clusters until saturation in size is reached.…”

Section: Resultsmentioning

confidence: 98%