Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Łagowski, J.; Gatos, H. C.; Parsey, J. M.; Wada, K.; Kamińska, M.; Walukiewicz, W.

doi:10.1063/1.93092

Cited by 284 publications

(42 citation statements)

References 10 publications

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“…Our argument is in conformity with the result of Huber et al [61] and Wallis et al [63]. If the 0.83 eV level was due to pure Ga vacancies in VPE samples, bulk present work, [44,49,51,55], [6,26,28,47,48,49,54,56] present work, [21,49], [25,26,29] À 2 VPE present work, [7,20,27,33,34,39,41,42,45,46] present work, [20,21,22,23,57,58], [27,61] present work, [22] 3 LPE present work, [28,32,60] [ 28,49], [32,60] present work, [30,33,34], [ 10 OMVPE-GaInAs …”

Section: Analysis and Discussionsupporting

confidence: 81%

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Saxena

2001

phys. stat. sol. (a)

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Capacitance-voltage/time measurements have been made on Au-Schottky barrier diodes to LPE, VPE, bulk, OMVPE-GaAs, GaAlAs and MBE-GaAs/GaAlAs quantum wells to detect and characterize deep levels. LPE-GaAs was-grown by varying the degree of melt under-and super-saturation to study the effect on traps. Cylinder-piston assembly and Bridgman anvil systems were employed to observe the emission of carriers from deep levels up to a pressure of 50 Â 10 8 Pa. The effect of annealing on traps in VPE-GaAs has also been investigated. It has been shown that emission from the 0.83 eV (EL-2) level in GaAs is not dependent on electric field in the range of about 60-125 kV/cm. The energy pressure coefficient of this level in GaAs has been measured as 4.0 Â 10 8 meV/Pa by extending measurements, for the first time, to 15 Â 10 8 Pa. From emission studies at 50 Â 10 8 Pa, it has been shown that the level EL-2 is coupled to the L minima and the G-L energy separation of 0.282 eV accounts for most of the experimental data. The 0.83 eV level has also been found to exist in LPE-GaAs and it has been concluded that Ga vacancy and As Ga antisite defect complex are responsible as the most likely source of its origin. It has been concluded that the absolute position of the level in the band gap remains almost invariant with pressure and that there is no need to assume a pressure dependent Franck-Condon shift. However, for a similar level found in GaAs/GaAlAs MBE quantum wells, the energy pressure coefficient has been measured to be as high as (13.8 AE 0.8) Â 10 8 meV/Pa. In some samples, 0.83 and 0.76 eV electron levels exist together, clearly showing that these are two different levels. The 0.64 eV hole trap level has not only been found in LPE-GaAs, GaAlAs, heat treated VPE but also in 'as-grown' VPE-GaAs. The present results have discounted the pure Ga and As vacancy model for the 0.83 and 0.64 eV levels in VPE and LPE-GaAs, respectively. We attribute the 0.64 eV hole level to a Ga vacancy-Cr complex.

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Section: Analysis and Discussionsupporting

confidence: 81%

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Saxena

2001

phys. stat. sol. (a)

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“…As Ga defects are expected to be strongly suppressed in the n-doped material. 8 This is consistent with the scanning tunneling microscopy observation that no As Ga defects were present in n-doped, annealed LT-GaAs. 9 However, it is not really convincing that As precipitates dominate the carrier compensation in doped LT-GaAs.…”

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confidence: 80%

Response to ‘‘Comment on ‘Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs’ ’’ [Appl. Phys. Lett. 67, 1331 (1995)]

Liu

Prasad

Chen

et al. 1995

Applied Physics Letters

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“…This photoquenching property of EL2 has been experimentally well documented, but despite extensive theoretical and experimental studies no commonly accepted microscopic model for EL2 in GaAs exists. Proposals range from very elaborate complexes involving arsenic antisite and vacancies [1] or antisite and interstitials [2] to simple arsenic antisite-like defects [3][4][5][6]. Common to all the various microscopic models, the defect metastability is interpreted in terms of a large lattice relaxation of the atoms forming the defect.…”

Section: Introductionmentioning

confidence: 99%

Absolute pressure dependence of the second ionization level of EL2 in GaAs

Bliss

Nolte

Walukiewicz

et al. 1990

Applied Physics Letters

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We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.

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Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Cited by 284 publications

References 10 publications

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

Response to ‘‘Comment on ‘Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs’ ’’ [Appl. Phys. Lett. 67, 1331 (1995)]

Absolute pressure dependence of the second ionization level of EL2 in GaAs

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