Abstract:Capacitance-voltage/time measurements have been made on Au-Schottky barrier diodes to LPE, VPE, bulk, OMVPE-GaAs, GaAlAs and MBE-GaAs/GaAlAs quantum wells to detect and characterize deep levels. LPE-GaAs was-grown by varying the degree of melt under-and super-saturation to study the effect on traps. Cylinder-piston assembly and Bridgman anvil systems were employed to observe the emission of carriers from deep levels up to a pressure of 50 Â 10 8 Pa. The effect of annealing on traps in VPE-GaAs has also been in… Show more
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